CM150DUS-12F Powerex Inc, CM150DUS-12F Datasheet

IGBT MOD DUAL 600V 150A F SER

CM150DUS-12F

Manufacturer Part Number
CM150DUS-12F
Description
IGBT MOD DUAL 600V 150A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM150DUS-12F

Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
41nF @ 10V
Power - Max
520W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
150A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
520W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
No. Of Pins
7
Distributorinventory
View
Voltage
600V
Current
150A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2C-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM150DUS-12F
Manufacturer:
MITSUBISHI
Quantity:
492
Part Number:
CM150DUS-12F
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
M
A
B
C
D
E
G
H
K
F
J
L
B
C
N
W
1.18 +0.04/-0.02 30.0 +1.0/-0.5
3.15±0.01
Inches
3.70
1.89
0.43
0.16
0.71
0.02
0.53
0.91
0.83
0.67
M
P - NUTS x Z DEEP (3 PLACES)
T C MEASURED
C2E1
C2E1
T
K
POINT
Millimeters
80.0±0.25
U
94.0
48.0
11.0
18.0
13.5
23.0
21.2
17.0
E2
4.0
0.5
A
D
V
RTC
K
Y
U
C1
T
E2
Dimensions
J
RTC
W
N
P
Q
R
S
U
V
X
Y
T
Z
#110 TAB x H THICK
(4 PLACES)
X
S
L
0.26 Dia.
Q (2 PLACES)
Inches
M5
0.28
0.02
0.30
0.63
0.10
1.0
0.94
0.51
0.47
0.47
F
F
C1
G
E
G2
E2
E1
G1
Millimeters
R
6.5 Dia.
16.0
25.0
24.0
13.0
12.0
12.0
M5
7.0
4.0
7.5
2.5
CM150DUS-12F
Trench Gate Design
Dual IGBTMOD™
150 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
£ Low V
£ Low E
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DUS-12F is
a 600V (V
IGBTMOD™ Power Module.
Type
CM
Free-Wheel Diode
Heat Sinking
Current Rating
CE(sat)
SW(off)
CES
Amperes
150
), 150 Ampere Dual
Volts (x 50)
V
12
CES
1
1

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CM150DUS-12F Summary of contents

Page 1

... Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DUS-12F is a 600V (V ), 150 Ampere Dual CES IGBTMOD™ Power Module. Current Rating V CES Type ...

Page 2

... C res 300V 150A, d(on 15V, r GE1 GE2 4.2Ω, Inductive d(off Load Switching Operation 150A CM150DUS-12F -40 to 150 -40 to 125 600 ±20 150 300* 150 300* 520 31 40 310 2500 rating. j(max) Min. Typ. Max – – – – 10V 25°C 1 ...

Page 3

... Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DUS-12F Trench Gate Design Dual IGBTMOD™ 150 Amperes/600 Volts Thermal and Mechanical Characteristics, T Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance External Gate Resistance ** If you use this value, R th(f-a) should be measured just under the chips ...

Page 4

... Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DUS-12F Trench Gate Design Dual IGBTMOD™ 150 Amperes/600 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL d(off d(on 300V 15V GE = 4.2 Ω 125C COLLECTOR CURRENT (AMPERES) C REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) ...

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