MKI50-12F7 IXYS, MKI50-12F7 Datasheet
MKI50-12F7
Manufacturer Part Number
MKI50-12F7
Description
MOD IGBT H-BRIDGE 1200V 65A E2
Manufacturer
IXYS
Datasheet
1.MKI50-12F7.pdf
(2 pages)
Specifications of MKI50-12F7
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.8V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
700µA
Input Capacitance (cies) @ Vce
3.3nF @ 25V
Power - Max
350W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
65
Ic80, Tc = 80°c, Igbt, (a)
45
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
3.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
2.5
Rthjc, Max, Igbt, (k/w)
0.35
If25, Tc = 25°c, Diode, (a)
110
If80, Tc = 80°c, Diode, (a)
70
Rthjc, Max, Diode, (k/w)
0.61
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MKI50-12F7
Manufacturer:
ATMEL
Quantity:
3 312
IGBT Modules
H Bridge
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
I
V
t
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
d(off)
SC
d(on)
r
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
Gon
thJC
Conditions
T
T
T
V
RBSOA; clamped inductive load; L = 100 µH
V
SCSOA; non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 50 A; V
= 2 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= 600 V; V
= 900 V; V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
= 600 V; I
= ± 15 V; R
;
GE
GE
GE
GE
= 15 V; T
GE
GE
= V
V
= ± 20 V
G
= 0 V; f = 1 MHz
GE
= 13 Ω; T
= 15 V; I
= ± 15 V; R
C
CE
G
= 0 V;
= 50 A
= 13 Ω
VJ
T
= 125°C
VJ
VJ
C
= 25°C
= 125°C
VJ
= 50 A
T
T
G
= 125°C
VJ
VJ
= 13 Ω; T
(T
Advanced Technical Information
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
13
17
Characteristic Values
1
2
3
4
Maximum Ratings
130
360
600
typ.
3.2
3.8
2.5
6.0
2.5
3.3
60
30
1200
± 20
V
350
100
MKI
65
45
CES
10
10
11
12
9
max.
0.35 K/W
500
3.8
6.5
0.7 mA
mA
mJ
mJ
nC
nA
nF
µs
ns
ns
ns
ns
16
14
W
V
V
A
A
A
V
V
V
I
V
V
Features
• Fast NPT IGBTs
• HiPerFRED
• Industry Standard Package
Typical Applications
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
- motor control
- supply of transformer primary winding
CES
CE(sat) typ.
easy paralleling
performance also in resonant circuits
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
. power supplies
. welding
. X-ray
. battery charger
TM
diode:
= 65 A
= 1200 V
= 3.2 V
MKI 50-12F7
1 - 2
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MKI50-12F7 Summary of contents
Page 1
... off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Advanced Technical Information MKI Maximum Ratings 1200 ± 125°C 100 VJ V CES = 13 Ω 125°C ...
Page 2
... M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2004 IXYS All rights reserved Advanced Technical Information Maximum Ratings 110 70 Characteristic Values min. typ. = 25°C 2 125°C 1 125° 200 Maximum Ratings -40 ...