MUBW35-12A8 IXYS, MUBW35-12A8 Datasheet

MUBW35-12A8

Manufacturer Part Number

MUBW35-12A8

Description

MODULE IGBT CBI E3

Manufacturer

IXYS

Datasheet

1.MUBW35-12A8.pdf (8 pages)

Specifications of MUBW35-12A8

Igbt Type

NPT

Configuration

Three Phase Inverter with Brake

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

3.1V @ 15V, 35A

Current - Collector (ic) (max)

50A

Current - Collector Cutoff (max)

1.1mA

Input Capacitance (cies) @ Vce

1.65nF @ 25V

Power - Max

225W

Input

Three Phase Bridge Rectifier

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

Channel Type

Collector-emitter Voltage

1.2kV

Gate To Emitter Voltage (max)

±20V

Pin Count

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Vrrm, Rect 1/3 Ph., (v)

1600

Idavm, Tc = 80°c, Rect 1/3 Ph., (a)

Rthjc, Typ, Rect 1/3 Ph., (k/w)

1.30

Vces, Inv 3 - Ph., (v)

1200

Ic25, Tc = 25°c, Inv 3 - Ph., (a)

Ic80, Tc = 80°c, Inv 3 - Ph., (a)

Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)

2.5

Rthjc, Typ, Inv 3 - Ph., (k/w)

0.55

Vces, Br Chopper, (v)

1200

Ic80, Tc = 80°c, Br Chopper, (a)

Rthjc, Typ, Br Chopper, (k/w)

0.70

Package Style

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUBW35-12A8

Manufacturer:

MITSUBISH

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MUBW35-12A8

Quantity:

Current page: 1 of 8
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Converter - Brake - Inverter Module

Three Phase

Rectifier

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier D11 - D16

FAV

DAVM

FSM

FAVM

FSM

RRM

tot

D12

RRM

D11

thJC

= 1600 V

= 42 A

= 300 A

D13

D14

Conditions

(per diode)

= 35 A; T

D15

D16

= 80°C; sine 180°

= 80°C; rectangular; d = 1/3; bridge

= 25°C

= V

= 25°C; t = 10 ms; sine 50 Hz

RRM

Brake Chopper

C25

CES

CE(sat)

; T

= 25°C

= 125°C

= 25°C

= 125°C

= 1200 V

= 35 A

= 2.3 V

Three Phase

Inverter

C25

CES

CE(sat)

= 25°C, unless otherwise specified)

= 1200 V

= 50 A

= 2.5 V

NTC

min.

Characteristic Values

Maximum Ratings

typ.

1.2

0.4

1600

300

100

max.

0.02 mA

1.4

1.3 K/W

(CBI3)

See outline drawing for pin arrangement

Application: AC motor drives with

●

Features

●

Input from single or three phase grid

Three phase synchronous or

asynchronous motor

electric braking operation

High level of integration - only one power

semiconductor module required for the

whole drive

NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

Temperature sense included

MUBW 35-12 A8

20070912a

E72873

1 - 8

Related parts for MUBW35-12A8

MUBW35-12A8 Summary of contents

Page 1

... Hz FSM 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved (CBI3 NTC 9 Three Phase Inverter V = 1200 V CES ...

Page 2

... F80 C Symbol Conditions /dt = -500 A/µ 600 (per diode) thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° ≤ CEK CES = 47 Ω 125° 225 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125° ...

Page 3

... 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° ≤ CEK CES = 82 Ω 125° 180 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2 ...

Page 4

... Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2007 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C +150 °C -40 ...

Page 5

... Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° K/W 1.2 Z thJC 0.8 0.4 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2007 IXYS All rights reserved 200 45°C VJ 150 I FSM 100 T = 150°C VJ ...

Page 6

... Fig. 8 Typ. output characteristics 100 125° 25° Fig. 10 Typ. forward characteristics of free wheeling diode 125° 300 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 125° 200 160 120 80 40 MUBW35-12A8 0 800 1000 A/μs 20070912a ...

Page 7

... 125° Fig.16 Typ. turn off energy and switching times versus gate resistor 10 1 single pulse 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 1200 ns 1000 t 800 600 t d(off) 400 200 800 t d(off) ns 600 t 400 200 Ω 90 diode IGBT MUBW3512A8 20070912a ...

Page 8

... Fig. 21 Typ. turn off energy and switching times versus collector current 10 K thJC 0.1 0.01 0.001 single pulse 0.0001 0.001 0.01 0.1 Fig. 23 Typ. transient thermal impedance © 2007 IXYS All rights reserved 125° 800 ns E 600 off t t d(off) ...

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