MUBW50-06A8

Manufacturer Part NumberMUBW50-06A8
DescriptionMODULE IGBT CBI E3
ManufacturerIXYS
MUBW50-06A8 datasheets

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Specifications of MUBW50-06A8

Igbt TypeNPTConfigurationThree Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.3V @ 15V, 50A
Current - Collector (ic) (max)75ACurrent - Collector Cutoff (max)800µA
Input Capacitance (cies) @ Vce2.8nF @ 25VPower - Max250W
InputThree Phase Bridge RectifierNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseE3
Channel TypeNCollector-emitter Voltage600V
Gate To Emitter Voltage (max)±20VPin Count24
MountingScrewOperating Temperature (min)-40C
Operating Temperature (max)125COperating Temperature ClassificationAutomotive
Vrrm, Rect 1/3 Ph., (v)1600Idavm, Tc = 80°c, Rect 1/3 Ph., (a)120
Rthjc, Typ, Rect 1/3 Ph., (k/w)1.06Vces, Inv 3 - Ph., (v)600
Ic25, Tc = 25°c, Inv 3 - Ph., (a)75Ic80, Tc = 80°c, Inv 3 - Ph., (a)50
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)1.9Rthjc, Typ, Inv 3 - Ph., (k/w)0.50
Vces, Br Chopper, (v)600Ic80, Tc = 80°c, Br Chopper, (a)25
Rthjc, Typ, Br Chopper, (k/w)1.00Package StyleE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
show all specifications
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Download datasheet (174Kb)Embed
Next
Converter - Brake - Inverter Module
21
22
D7
D11
D13
D15
7
1
2
3
T7
D16
D12
D14
14
23
24
Three Phase
Brake Chopper
Rectifier
V
= 1600 V
V
= 600 V
RRM
CES
I
= 60 A
I
= 35 A
FAVM
C25
I
= 500 A
V
= 2.1 V
FSM
CE(sat)
Input Rectifier D11 - D16
Symbol
Conditions
V
RRM
I
T
= 80°C; sine 180°
FAV
C
I
T
= 80°C; rectangular; d = 1/3; bridge
DAVM
C
I
T
= 25°C; t = 10 ms; sine 50 Hz
FSM
VJ
P
T
= 25°C
tot
C
Symbol
Conditions
V
I
= 50 A; T
= 25°C
VJ
F
F
T
= 125°C
VJ
I
V
= V
; T
= 25°C
VJ
R
R
RRM
T
= 125°C
VJ
R
(per diode)
thJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
(CBI3)
T1
D1
T5
T3
D3
16
20
18
15
19
17
6
5
T4
T2
T6
D2
D4
11
12
13
10
8
NTC
9
Three Phase
Inverter
V
= 600 V
CES
I
= 75 A
C25
V
= 1.9 V
CE(sat)
Maximum Ratings
1600
42
120
500
120
Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min.
typ.
max.
1.2
1.4
1.2
0.02 mA
0.6
1.06 K/W
MUBW 50-06 A8
D5
4
D6
See outline drawing for pin arrangement
Application: AC motor drives with
●
Input from single or three phase grid
●
Three phase synchronous or
asynchronous motor
V
●
electric braking operation
A
Features
A
A
●
High level of integration - only one power
semiconductor module required for the
W
whole drive
●
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
●
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
●
Industry standard package with insulated
copper base plate and soldering pins for
V
PCB mounting
V
●
Temperature sense included
mA
E72873
20070921a
1 - 8

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MUBW50-06A8 Summary of contents

  • Page 1

    ... Hz FSM 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved (CBI3 NTC 9 Three Phase Inverter V = 600 V CES ...

  • Page 2

    ... F80 C Symbol Conditions /dt = -500 A/µ 300 (per diode) thJC © 2007 IXYS All rights reserved Maximum Ratings 600 ± 125° 100 VJ CM ≤ CEK CES = 22 Ω 125° 250 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 1.9 ...

  • Page 3

    ... 125° 25° RRM T = 125° /dt = -400 A/µ 300 thJC © 2007 IXYS All rights reserved Maximum Ratings 600 ± 125° ≤ CEK CES = 47 Ω 125° 125 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2 ...

  • Page 4

    ... Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2007 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C +150 °C -40 ...

  • Page 5

    ... Power dissipation versus direct output current and ambient temperature, sin 180° 1.2 K/W 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2007 IXYS All rights reserved 500 45°C VJ 400 I FSM 300 200 T = 150°C VJ ...

  • Page 6

    ... Fig. 8 Typ. output characteristics 100 125° 25° 0.5 1.0 1 Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 125° 2.0 200 160 120 80 = 125° 300 MUBW50-06A8 0 800 1000 A/μs 20070921a ...

  • Page 7

    ... Typ. turn off energy and switching times versus gate resistor 10 1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 500 = 600 ± 400 = 39 Ω 125° 300 200 100 600 ns t 400 E off 200 Ω diode IGBT MUBW5006A8 20070921a ...

  • Page 8

    ... VJ E off Fig. 21 Typ. turn off energy and switching times versus collector current 10 K thJC 0.1 0.01 0.001 single pulse 0.0001 0.001 0.01 0.1 Fig. 23 Typ. transient thermal impedance © 2007 IXYS All rights reserved 125° 400 1. off t 200 0. 0. ...

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