CM200DU-12NFH Powerex Inc, CM200DU-12NFH Datasheet - Page 2

IGBT MOD DUAL 600V 200A NFH SER

CM200DU-12NFH

Manufacturer Part Number
CM200DU-12NFH
Description
IGBT MOD DUAL 600V 200A NFH SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200DU-12NFH

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
55nF @ 10V
Power - Max
590W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
590W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Distributorinventory
View
Voltage
600V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA507
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2C-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1082
CM200DU-12NFH

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DU-12NFH
Quantity:
55
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T C = 25°C)
Peak Collector Current
Emitter Current** (T C = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C)
Maximum Collector Dissipation (T C' = 25°C, T j' ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
* Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V CE(sat)
V GE(th)
Symbol
Symbol
t d(on)
t d(off)
I GES
I CES
C oes
C res
V EC
C ies
Q G
Q rr
t rr
t r
t f
Inductive Load Switching Operation,
V CC = 300V, I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 125°C
V GE1 = V GE2 = 15V, R G = 6.3Ω,
I C = 200A, V GE = 15V, T j = 25°C
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
V CC = 300V, I C = 200A,
I C = 20mA, V CE = 10V
V CE = 10V, V GE = 0V
I E = 100A, V GE = 0V
Test Conditions
Test Conditions
I E = 200A
Symbol
V GES
V CES
V ISO
T stg
I CM
I EM
P C
P C
I C
I E
T j
Min.
Min.
5.0
CM200DU-12NF
–40 to 150
–40 to 125
2500
200*
400*
200*
400*
600
±20
590
830
310
30
40
1240
Typ.
1.95
Typ.
6.0
2.0
3.5
Max.
Max.
250
150
500
150
150
0.5
2.7
2.6
3.6
2.0
1.0
7.0
55
Amperes
Amperes
Amperes
Amperes
Grams
Rev. 11/09
Watts
Watts
Volts
Units
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf

Related parts for CM200DU-12NFH