MWI50-12A7 IXYS, MWI50-12A7 Datasheet
MWI50-12A7
Manufacturer Part Number
MWI50-12A7
Description
MOD IGBT SIXPACK RBSOA 1200V E2
Manufacturer
IXYS
Datasheet
1.MWI50-12A7.pdf
(4 pages)
Specifications of MWI50-12A7
Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 50A
Current - Collector (ic) (max)
85A
Current - Collector Cutoff (max)
4mA
Input Capacitance (cies) @ Vce
3.3nF @ 25V
Power - Max
350W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
85A
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
85
Ic80, Tc = 80°c, Igbt, (a)
60
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
5.6
Rthjc, Max, Igbt, (k/w)
0.35
If25, Tc = 25°c, Diode, (a)
110
If80, Tc = 80°c, Diode, (a)
70
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI50-12A7T
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
MWI50-12A7T
Quantity:
60
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
MWI 50-12 A7
MWI 50-12 A7T
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Inductive load, T
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
GE
CE
CE
= 2 mA; V
= 50 A; V
= 25°C
= 80°C
= 25°C
= 25°C to 150°C
= V
= V
= 600V; V
= ± 15 V; R
= 0 V; V
= 600 V; I
= 25 V; V
= ± 15 V; R
NTC - Option:
without NTC
with NTC
CES
CES
; V
; V
GE
GE
GE
GE
GE
GE
GE
C
= 15 V; T
= ± 20 V
G
= V
= 0 V; T
G
= ± 15 V; R
= 50 A
= 0 V; f = 1 MHz
= 15 V; I
= 22 Ω; T
= 22 Ω
VJ
CE
= 125°C
T
T
VJ
VJ
VJ
VJ
C
= 25°C
= 25°C
= 125°C
= 125°C
G
VJ
= 50 A
= 22 Ω; T
= 125°C
(T
13
17
1
2
3
4
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
5
6
7
8
min.
4.5
I
Characteristic Values
CM
V
CEK
Maximum Ratings
=
3300
100
500
230
typ.
≤ V
2.2
2.5
7.6
5.6
10
11
12
70
70
1200
9
± 20
3
100
350
CES
85
60
10
max.
0.35 K/W
200
2.7
6.5
4 mA
16
15
14
mA
µs
mJ
mJ
W
nC
nA
pF
ns
ns
ns
ns
V
V
A
A
A
T
T
V
V
V
NTC
I
V
V
See outline drawing for pin arrangement
Features
●
●
●
●
●
●
●
●
●
●
●
Advantages
●
●
●
Typical Applications
●
●
●
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 50-12 A7
MWI 50-12 A7T
= 85 A
= 1200 V
= 2.2 V
20070912a
E72873
1 - 4
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MWI50-12A7 Summary of contents
Page 1
... A d(off Ω = ± off MHz ies 600V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° 100 VJ CM ≤ CEK CES = 22 Ω 125°C ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 110 70 Characteristic Values min. typ. = 25°C 2 125°C 1 125° ...
Page 3
... J A 150 120 Fig. 4 Typ. forward characteristics of free wheeling diode 120 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode V =17V GE 15V 13V 11V 9V 3 25° 300 200 = 125°C J 100 = 600V R = 50A MWI50-12A7 0 800 1000 A/μs 20070912a ...
Page 4
... IGBT single pulse 0.00001 0.0001 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 ns E off 500 t d(off) t 400 300 V = 600V ±15V GE 200 R = 22Ω 125°C J 100 100 A 1500 t d(off) ns 1200 E off t 900 600 300 Ω MWI50-12A7 0 20070912a ...