CM200DY-12NF Powerex Inc, CM200DY-12NF Datasheet - Page 2

IGBT MOD DUAL 600V 200A NF SER

CM200DY-12NF

Manufacturer Part Number
CM200DY-12NF
Description
IGBT MOD DUAL 600V 200A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200DY-12NF

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
30nF @ 10V
Power - Max
650W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
650W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Distributorinventory
View
Voltage
600V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2C-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1011

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2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-12NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that device junction temperature (T
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
***Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips
C
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
' = 93 C)
C
= 25 C, T
j
= 25 C unless otherwise specified
j
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
150 C)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
GES
CES
Q
j
Q
t
oes
EC
t
ies
res
t
= 25 C unless otherwise specified
rr
r
f
G
rr
V
j
I
) does not exceed T
I
C
CC
V
C
GE1
= 200A, V
= 200A, V
= 300V, I
V
V
V
I
C
V
I
CC
Switching Operation,
CE
GE
= V
E
CE
= 20mA, V
= 200A, V
Inductive Load
Test Conditions
Test Conditions
= V
= 300V, I
= V
GE2
j
) does not exceed T
= 10V, V
I
E
GE
C
GE
CES
GES
= 200A
= 15V, R
= 200A, V
jMAX
= 15V, T
= 15V, T
, V
, V
CE
C
GE
GE
rating.
GE
CE
= 200A,
= 10V
= 0V
= 0V
G
= 0V
= 0V
j
j
GE
= 125 C
= 3.1 ,
= 25 C
Symbol
V
V
V
T
I
j(max)
I
= 15V
GES
P
CES
CM
EM
T
I
ISO
I
stg
E
C
C
j
rating.
Min.
Min.
5.0
CM200DY-12NF
–40 to 150
–40 to 125
2500
400*
400*
600
200
650
310
200
30
40
20
Typ.
Typ.
800
6.0
1.7
1.7
3.5
Max.
Max.
120
120
300
300
150
1.0
0.5
7.5
2.2
2.6
30
3.7
1.2
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
nC
ns
ns
ns
ns
ns
nf
nf
nf
A
C

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