CM200DY-12NF Powerex Inc, CM200DY-12NF Datasheet - Page 3

• Manufacturer Part Number: CM200DY-12NF
• Description: IGBT MOD DUAL 600V 200A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-12NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 30nF @ 10V
• Power - Max: 650W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 650W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1011

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200DY-12NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
400
300
200
100
10
10
10
0
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
T
T
2
1
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
13
15
(TYPICAL)
(TYPICAL)
2
4
6
3
8
CE
EC
T
, (VOLTS)
, (VOLTS)
j
8
4
= 25
12
11
10
9
o
C
10
5
R
R
R
Symbol
R
th(j-c')
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
-1
0
4
3
2
1
2
1
0
10
Q
D
Q
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25 C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
= 15V
= 0V
T
T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
100
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
T
C
10
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chips
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
200
Test Conditions
C
10
, (AMPERES)
1
300
C
C
C
CE
ies
oes
res
, (VOLTS)
C
C
Reference
400
Reference
10
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
3.1
j
—
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.07
Typ.
—
—
—
—
(TYPICAL)
(TYPICAL)
12
10
2
I
I
I
14
C
C
C
= 400A
= 200A
= 80A
C
Max.
V
V
R
T
Inductive Load
0.19
0.35
0.13
, (AMPERES)
t
t
j
—
31
t
t
CC
GE
G
GE
d(off)
f
16
d(on)
r
= 125°C
= 3.1
, (VOLTS)
= 300V
= ±15V
18
Units
C/W
C/W
C/W
C/W
10
20
3
3