CM200DY-24A Powerex Inc, CM200DY-24A Datasheet - Page 2

• Manufacturer Part Number: CM200DY-24A
• Description: IGBT MOD DUAL 1200V 200A A SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-24A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 35nF @ 10V
• Power - Max: 1340W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 1.34kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 86°C*)
Peak Collector Current
Emitter Current*** (T C = 25°C)
Peak Emitter Current***
Maximum Collector Dissipation (T C = 25°C*, T j ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current I GES
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time***
Diode Reverse Recovery Charge***
*T C , T f measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V GE = V GES , V CE = 0V
V CE(sat)
V GE(th)
Symbol
Symbol
t d(on)
t d(off)
I CES
C oes
C res
V EC
C ies
Q G
Q rr
t rr
t r
t f
V CC = 600V, I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 125°C
V GE1 = V GE2 = 15V, R G = 1.6Ω,
I C = 200A, V GE = 15V, T j = 25°C
V CE = V CES , V GE = 0V
V CC = 600V, I C = 200A,
I C = 20mA, V CE = 10V
V CE = 10V, V GE = 0V
I E = 200A, V GE = 0V
Switching Operation,
Inductive Load
Test Conditions
Test Conditions
I E = 200A
—
Symbol
V GES
V CES
V ISO
T stg
I CM
I EM
P C
I C
I E
—
—
—
T j
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM200DY-24A
–40 to 150
–40 to 125
400**
400**
1200
1340
2500
±20
200
200
310
30
40
1000
Typ.
Typ.
0.5
2.1
2.4
9.0
7.0
—
—
—
—
—
—
—
—
—
—
Max.
Max.
130
100
450
350
150
8.0
3.0
3.8
1.0
µA
—
—
—
35
3
0.68
Amperes
Amperes
Amperes
Amperes
Grams
Rev. 08/09
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf