CM200DY-24A Powerex Inc, CM200DY-24A Datasheet - Page 3

• Manufacturer Part Number: CM200DY-24A
• Description: IGBT MOD DUAL 1200V 200A A SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-24A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 35nF @ 10V
• Power - Max: 1340W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 1.34kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T C , T f measured point is just under the chips.
Rev. 08/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
400
300
200
100
10
10
10
0
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
1
2
FREE-WHEEL DIODE
15
13
(TYPICAL)
(TYPICAL)
2
4
6
3
T
T
CE
j
j
EC
T
= 25°C
= 125°C
, (VOLTS)
, (VOLTS)
j
8
4
= 25 °C
12
11
10
9
10
5
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
10
10
10
10
0
-1
4
3
2
1
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
GE
GE
COLLECTOR-CURRENT, I
Per 1/2 Module, Thermal Grease Applied
= 0V
= 15V
T
T
100
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0
(TYPICAL)
(TYPICAL)
Per FWDi 1/2 Module
Per IGBT 1/2 Module
200
Test Conditions
C
10
, (AMPERES)
1
300
C
C
C
CE
ies
oes
res
, (VOLTS)
400
10
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
I
j
1.6
C
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
= 80A
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
COLLECTOR-EMITTER
t
10
d(off)
0.022
HALF-BRIDGE
Typ.
—
—
—
(TYPICAL)
(TYPICAL)
12
10
t
2
14
I
f
C
I
C
= 400A
= 200A
C
0.093
V
V
R
T
Inductive Load
Max.
, (AMPERES)
0.17
j
CC
GE
G
21
GE
t
t
—
d(on)
16
r
= 125°C
= 1.6Ω
, (VOLTS)
= 600V
= 15V
18
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3