CM200DU-12F Powerex Inc, CM200DU-12F Datasheet - Page 3

IGBT MOD DUAL 600V 200A F SER

CM200DU-12F

Manufacturer Part Number
CM200DU-12F
Description
IGBT MOD DUAL 600V 200A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM200DU-12F

Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
54nF @ 10V
Power - Max
590W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
590W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
835-1081
CM200DU-12F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM200DU-12F
Manufacturer:
TI
Quantity:
101
Part Number:
CM200DU-12F
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-12F
Trench Gate Design Dual IGBTMOD™
200 Amperes/600 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
R
R
Symbol
Symbol
R
th(j-c)
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
j
oes
t
t
ies
res
t
rr
r
f
= 25°C unless otherwise specified
rr
'Q
Q
D
j
= 25°C unless otherwise specified
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
T
c
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
V
V
Per IGBT 1/2 Module,
CC
V
Switching Operation
CE
GE1
Inductive Load
Test Conditions
Test Conditions
= 300V, I
= 10V, V
R
I
E
= V
G
= 200A
= 3.1,
GE2
C
GE
= 15V,
= 200A,
c
= 0V
c
Reference
Reference
Min.
Min.
Typ.
Typ.
3.8
0.13
0.045
120
100
350
250
150
54
Max.
Max.
3.6
2
0.21
0.35
Units
Units
°C/W
°C/W
°C/W
°C/W
μC
ns
ns
ns
ns
ns
nf
nf
nf
3

Related parts for CM200DU-12F