MWI150-06A8 IXYS, MWI150-06A8 Datasheet
MWI150-06A8
Manufacturer Part Number
MWI150-06A8
Description
TRANS 16BIY 3-PH 600V 115AMP
Manufacturer
IXYS
Datasheet
1.MWI150-06A8.pdf
(2 pages)
Specifications of MWI150-06A8
Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 150A
Current - Collector (ic) (max)
170A
Current - Collector Cutoff (max)
1.5mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
515W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
170
Ic80, Tc = 80°c, Igbt, (a)
115
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.0
Eoff, Typ, Tj = 125°c, Igbt, (mj)
4.6
Rthjc, Max, Igbt, (k/w)
0.24
If25, Tc = 25°c, Diode, (a)
210
If80, Tc = 80°c, Diode, (a)
130
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q2256181
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI150-06A8
Manufacturer:
HITACHI
Quantity:
1 000
Part Number:
MWI150-06A8
Quantity:
60
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Preliminary data
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 3 mA; V
= 150 A; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 300V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= ± 15 V; R
; V
; V
GE
GE
GE
GE
GE
GE
GE
= ± 20 V
G
= V
= 0 V; T
= ± 15 V; R
= 15 V; T
= 0 V; f = 1 MHz
= 15 V; I
= 1.5 Ω; T
C
G
CE
= 150 A
= 1.5 Ω
VJ
T
= 125°C
VJ
VJ
T
VJ
VJ
C
= 25°C
= 125°C
G
= 150 A
VJ
= 25°C
= 125°C
= 1.5 Ω; T
= 125°C
(T
14, 20
13, 21
VJ
= 25°C, unless otherwise specified)
1
2
3
4
VJ
= 125°C
min.
4.5
5
6
7
8
Characteristic Values
I
V
CM
CEK
Maximum Ratings
=
125
225
520
typ.
≤ V
2.0
2.3
1.1
2.3
4.6
6.5
30
35
± 20
600
170
115
300
515
10
11
12
CES
10
9
max.
0.24 K/W
400
2.5
6.5
1.5 mA
mA
µs
mJ
mJ
W
nC
nA
nF
ns
ns
ns
ns
V
V
A
A
A
19
17
15
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
€ €
€ €
€ €
€ €
€ €
€ €
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Advantages
€ €
€ €
€ €
Typical Applications
€ €
€ €
€ €
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 150-06 A8
= 170 A
= 600 V
= 2.0 V
20070912a
E72873
1 - 2
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MWI150-06A8 Summary of contents
Page 1
... Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 210 130 Characteristic Values min. typ. = 25°C 1 125°C 1 ...