MKI100-12F8 IXYS, MKI100-12F8 Datasheet
MKI100-12F8
Manufacturer Part Number
MKI100-12F8
Description
MOD IGBT H-BRIDGE 1200V 125A E3
Manufacturer
IXYS
Datasheet
1.MKI100-12F8.pdf
(2 pages)
Specifications of MKI100-12F8
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 100A
Current - Collector (ic) (max)
125A
Current - Collector Cutoff (max)
1.3mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
640W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
125
Ic80, Tc = 80°c, Igbt, (a)
85
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
3.3
Eoff, Typ, Tj = 125°c, Igbt, (mj)
5.0
Rthjc, Max, Igbt, (k/w)
0.19
If25, Tc = 25°c, Diode, (a)
200
If80, Tc = 80°c, Diode, (a)
130
Rthjc, Max, Diode, (k/w)
0.30
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
H Bridge
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
I
V
t
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
d(off)
SC
d(on)
r
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
Gon
thJC
Conditions
T
T
T
V
RBSOA; clamped inductive load; L = 100 µH
V
SCSOA; non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 100 A; V
= 4 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= 900 V; V
= 600 V; V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
= 600 V; I
= ± 15 V; R
;
GE
GE
GE
GE
GE
GE
V
= ± 20 V
G
= V
= 15 V; T
= 0 V; f = 1 MHz
GE
= 5.6 Ω; T
= ± 15 V; R
= ± 15 V; I
C
G
CE
= 0 V;
= 100 A
= 5.6 Ω
VJ
= 125°C
T
VJ
VJ
VJ
= 25°C
= 125°C
T
T
C
G
VJ
VJ
= 100 A
= 125°C
= 5.6 Ω; T
(T
Advanced Technical Information
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
13, 21
14, 20
min.
4.5
2
3
4
1
Characteristic Values
Maximum Ratings
12.0
130
365
typ.
3.3
4.0
4.0
5.0
6.5
1.1
60
30
1200
± 20
V
125
640
200
MKI
10
12
11
85
CES
10
9
max.
0.19 K/W
600
3.9
6.5
1.3 mA
mA
mJ
mJ
µC
nA
19
15
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
Features
• Fast NPT IGBTs
• HiPerFRED
• Industry Standard Package
Typical Applications
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- solderable pins for PCB mounting
- isolated copper base plate
- motor control
- supply of transformer primary winding
CES
CE(sat) typ.
easy paralleling
performance also in resonant circuits
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
. power supplies
. welding
. X-ray
. battery charger
TM
MKI 100-12F8
diode:
= 125 A
= 1200 V
= 3.3 V
1 - 2
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MKI100-12F8 Summary of contents
Page 1
... off MHz ies ± 600 V; V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Advanced Technical Information 13 14, 20 MKI Maximum Ratings 1200 ± 20 125 85 = 125°C 200 VJ V CES = 5.6 Ω ...
Page 2
... Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight pins and 17 for MWI only © 2004 IXYS All rights reserved Advanced Technical Information Maximum Ratings 200 130 Characteristic Values min. typ. = 25°C 2 125°C 1 125° ...