CM200DY-12H Powerex Inc, CM200DY-12H Datasheet - Page 2

• Manufacturer Part Number: CM200DY-12H
• Description: IGBT MOD DUAL 600V 200A H SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM200DY-12H

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 780W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 835-1084; CM200DY-12H

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V CE(sat)
V GE(th)
R th(c-f)
R th(j-c)
R th(j-c)
Symbol
Symbol
Symbol
t d(on)
t d(off)
I GES
I CES
C oes
V FM
C res
C ies
Q G
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
V CC = 300V, I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 150°C
V GE1 = V GE2 = 15V, R G = 3.1Ω
I E = 200A, di E /dt = -400/µs
I E = 200A, di E /dt = -400/µs
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
V CC = 300V, I C = 200A,
I C = 20mA, V CE = 10V
I C = 200A, V GE = 15V
V GE = 0V, V CE = 10V
I E = 200A, V GE = 0V
Test Conditions
Test Conditions
Test Conditions
Per FWDi
Per IGBT
Symbol
V RMS
V GES
V CES
T stg
I CM
I FM
P d
I C
—
—
—
T j
I F
Min.
Min.
Min.
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM200DY-12H
–40 to 150
–40 to 125
2500
400*
400*
600
±20
200
200
780
270
26
17
2.15
0.54
Typ.
Typ.
Typ.
600
6.0
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.065
Max.
Max.
Max.
0.35
2.8**
0.16
200
300
300
110
550
0.5
2.8
1.0
7.5
—
—
—
20
7
4
05/10 Rev. 1
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Units
Volts
Volts
in-lb
in-lb
°C
°C
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Units
Units
Units
mA
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns