IGBT MOD DUAL 600V 200A H SER

CM200DY-12H

Manufacturer Part NumberCM200DY-12H
DescriptionIGBT MOD DUAL 600V 200A H SER
ManufacturerPowerex Inc
SeriesIGBTMOD™
CM200DY-12H datasheet
 


Specifications of CM200DY-12H

ConfigurationHalf BridgeVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic2.8V @ 15V, 200ACurrent - Collector (ic) (max)200A
Current - Collector Cutoff (max)1mAInput Capacitance (cies) @ Vce20nF @ 10V
Power - Max780WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / CaseModuleTransistor PolarityN Channel
Dc Collector Current200ACollector Emitter Voltage Vces600V
Power Dissipation Pd780WCollector Emitter Voltage V(br)ceo600V
Operating Temperature Range-40°C To +150°CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-Other names835-1084
CM200DY-12H
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 2/4

Download datasheet (425Kb)Embed
PrevNext
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
2
Symbol
Test Conditions
I CES
V CE = V CES , V GE = 0V
I GES
V GE = V GES , V CE = 0V
V GE(th)
I C = 20mA, V CE = 10V
V CE(sat)
I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 150°C
Q G
V CC = 300V, I C = 200A, V GE = 15V
V FM
I E = 200A, V GE = 0V
Symbol
Test Conditions
C ies
C oes
V GE = 0V, V CE = 10V
C res
t d(on)
t r
V CC = 300V, I C = 200A,
t d(off)
V GE1 = V GE2 = 15V, R G = 3.1Ω
t f
t rr
I E = 200A, di E /dt = -400/µs
Q rr
I E = 200A, di E /dt = -400/µs
Symbol
Test Conditions
R th(j-c)
Per IGBT
R th(j-c)
Per FWDi
R th(c-f)
Per Module, Thermal Grease Applied
Symbol
CM200DY-12H
T j
–40 to 150
T stg
–40 to 125
V CES
600
V GES
±20
I C
200
Amperes
I CM
400*
Amperes
I F
200
Amperes
I FM
400*
Amperes
P d
780
Watts
17
26
270
Grams
V RMS
2500
Min.
Typ.
Max.
1.0
0.5
4.5
6.0
7.5
2.1
2.8**
2.15
600
2.8
Min.
Typ.
Max.
20
7
4
200
550
300
300
110
0.54
Min.
Typ.
Max.
0.16
0.35
0.065
05/10 Rev. 1
Units
°C
°C
Volts
Volts
in-lb
in-lb
Volts
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Units
°C/W
°C/W
°C/W