CM600HU-12F Powerex Inc, CM600HU-12F Datasheet - Page 4

• Manufacturer Part Number: CM600HU-12F
• Description: IGBT MOD SGL 600V 600A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM600HU-12F

• Igbt Type: Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 160nF @ 10V
• Power - Max: 1420W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.42kW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 600V
• Current: 600A
• Circuit Configuration: Single
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA503
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1098; CM600HU-12F

4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes/600 Volts
1200
1000
800
600
400
200
10
10
10
10
10
10
10
0
4
3
2
1
3
2
1
10
0
0
REVERSE RECOVERY CHARACTERISTICS
EMITTER-COLLECTOR VOLTAGE, V
1
COLLECTOR-EMITTER VOLTAGE, V
T
T
j
j
= 25 C
= 25
FORWARD CHARACTERISTICS
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
V
1.0
o
C
1
GE
FREE-WHEEL DIODE
= 20V
t
I
rr
rr
15
(TYPICAL)
(TYPICAL)
(TYPICAL)
11
2.0
10
2
7.5
2
8
E
10
, (AMPERES)
8.5
V
V
R
T
Inductive Load
9.5
9
j
CC
GE
G
= 25 C
3.0
= 3.1
EC
3
CE
= 300V
= 15V
, (VOLTS)
, (VOLTS)
4.0
10
4
3
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
3
2
1
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
COLLECTOR-CURRENT, I
200
= 600A
GE
1000
= 0V
= 15V
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25 C
= 125 C
400
10
2000
0
(TYPICAL)
(TYPICAL)
V
600
CC
3000
= 200V
G
800
C
10
, (AMPERES)
, (nC)
GE
1
V
C
C
C
CE
CE
CC
4000
ies
oes
res
1000
, (VOLTS)
= 300V
1200
5000
10
2
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
3
2
1
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
1
-3
Per Unit Base
R
R
Single Pulse
T
T
C
th(j-c)
th(j-c)
IMPEDANCE CHARACTERISTICS
GATE-EMITTER VOLTAGE, V
j
6
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
= 25 C
= 25 C
10
TRANSIENT THERMAL
= 0.088 C/W (IGBT)
= 0.12 C/W (FWDi)
COLLECTOR-EMITTER
8
-2
t
t
d(off)
d(on)
I
C
(IGBT & FWDi)
HALF-BRIDGE
t
t
= 240A
10
f
r
(TYPICAL)
(TYPICAL)
I
TIME, (s)
C
10
10
10
= 600A
12
I
C
-1
-5
2
= 1200A
14
C
V
V
R
T
Inductive Load
, (AMPERES)
GE
j
CC
GE
G
= 125 C
10
10
16
, (VOLTS)
= 3.1
= 300V
= 15V
-4
0
18
10
10
10
20
-3
3
1
10
10
10
-1
-2
-3