CM200DY-24NF Powerex Inc, CM200DY-24NF Datasheet - Page 4

• Manufacturer Part Number: CM200DY-24NF
• Description: IGBT MOD DUAL 1200V 200A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-24NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 47nF @ 10V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Power Dissipation Pd: 1.13kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 200A
• Collector Emitter Saturation Voltage Vce(sat): 2.5V
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1012

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200DY-24NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/1200 Volts
10
10
10
10
10
10
3
2
1
2
1
0
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
R
T
Inductive Load
j
CC
GE
G
= 25°C
= 1.6Ω
GATE RESISTANCE (TYPICAL)
EMITTER CURRENT, I
= 600V
= 15V
GATE RESISTANCE, R
SWITCHING LOSS VS.
(TYPICAL)
10
10
2
1
E
V
V
I
T
Inductive Load
C Snubber at Bus
C
, (AMPERES)
CC
GE
j
= 125°C
= 200A
G
= 600V
= 15V
, (Ω)
E
E
SW(on)
SW(off)
I
t
rr
rr
10
10
3
2
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
-1
-2
-3
0
10
0
-3
I
Single Pulse
T
Per Unit Base =
R
R
C
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
0.11°C/W
(IGBT)
0.19°C/W
(FWDi)
= 200A
= 25°C
400
10
GATE CHARGE VS. V GE
=
=
TRANSIENT THERMAL
GATE CHARGE, Q
-2
(IGBT & FWDi)
800
V
CC
TIME, (s)
10
10
= 400V
-1
-5
1200
G
V
, (nC)
CC
10
10
= 600V
1600
-4
0
2000
10
10
-3
1
10
10
10
-1
-2
-3
10
10
10
2
1
0
10
1
V
V
R
T
Inductive Load
C Snubber at Bus
CC
GE
j
G
COLLECTOR CURRENT (TYPICAL)
= 125°C
COLLECTOR CURRENT, I
= 1.6Ω
= 600V
= 15V
SWITCHING LOSS VS.
10
2
C
, (AMPERES)
E
E
SW(on)
SW(off)
10
3