CM200DY-34A Powerex Inc, CM200DY-34A Datasheet - Page 4

IGBT MOD DUAL 1700V 200A A SER

CM200DY-34A

Manufacturer Part Number
CM200DY-34A
Description
IGBT MOD DUAL 1700V 200A A SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200DY-34A

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
49.4nF @ 10V
Power - Max
1980W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
1.7kV
Power Dissipation Pd
1.98kW
Operating Temperature Range
-40°C To +150°C
Distributorinventory
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Voltage
1700V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA500K-01R
Interface Circuit Ref Design
BG2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DY-34A
Manufacturer:
QUALCOMM
Quantity:
2 000
Part Number:
CM200DY-34A
Manufacturer:
MIT
Quantity:
20 000
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM200DY-34A
Dual IGBTMOD™ A-Series Module
200 Amperes/1700 Volts
10
10
10
10
10
10
10
10
10
10
-1
-2
-3
3
2
1
3
2
1
0
10
10
10
1
0
-3
V
V
I
T
Inductive Load
Single Pulse
T
Per Unit Base =
R
R
C
CC
GE
j
COLLECTOR CURRENT (TYPICAL)
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 125°C
= 200A
COLLECTOR CURRENT, I
0.063°C/W
(IGBT)
0.11°C/W
(FWDi)
= 25°C
GATE RESISTANCE (TYPICAL)
= 1000V
= 15V
t
t
f
d(on)
10
=
=
TRANSIENT THERMAL
GATE RESISTANCE, R
SWITCHING LOSS VS.
SWITCHING TIME VS.
-2
(IGBT & FWDi)
TIME, (s)
10
10
10
10
-1
-5
2
1
t
d(off)
t
r
C
, (AMPERES)
V
V
R
T
Inductive Load
G
CC
GE
j
G
= 125°C
, (Ω)
10
E
E
10
E
= 2.4Ω
on
off
= 1000V
= 15V
rr
-4
0
10
10
10
10
3
-3
2
1
10
10
10
-1
-2
-3
10
10
10
10
10
10
10
3
2
1
0
3
2
1
10
10
REVERSE RECOVERY CHARACTERISTICS
0
1
V
V
R
T
Inductive Load
j
CC
GE
G
= 25°C
t
t
= 2.4Ω
GATE RESISTANCE (TYPICAL)
f
r
= 1000V
= 15V
EMITTER CURRENT, I
GATE RESISTANCE, R
SWITCHING TIME VS.
(TYPICAL)
10
10
1
2
C
, (AMPERES)
V
V
I
T
Inductive Load
C
CC
GE
j
G
= 125°C
= 200A
, (Ω)
t
t
d(off)
d(on)
= 1000V
= 15V
I
t
rr
rr
10
10
2
3
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
3
2
1
0
10
0
1
I
C
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT, I
= 200A
500
GATE CHARGE VS. V GE
SWITCHING LOSS VS.
GATE CHARGE, Q
V
CC
= 800V
1000
10
2
G
C
V
V
R
T
Inductive Load
V
, (nC)
, (AMPERES)
CC
GE
j
G
CC
E
E
E
= 125°C
1500
on
off
= 2.4Ω
rr
= 1000V
= 15V
= 1000V
01/10 Rev. 1
2000
10
3

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