CM75TF-12H Powerex Inc, CM75TF-12H Datasheet

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CM75TF-12H

Manufacturer Part Number
CM75TF-12H
Description
IGBT MOD 6PAC 600V 75A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM75TF-12H

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.5nF @ 10V
Power - Max
310W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
75A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
310W
Operating Temperature Range
-40°C To +150°C
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM75TF-12H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM75TF-12H
Manufacturer:
MITSUBIS
Quantity:
1 000
Part Number:
CM75TF-12H
Quantity:
55
Part Number:
CM75TF-12H/E
Manufacturer:
MITSUBISHI
Quantity:
1 000
Dimensions
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
N
P
C
D
G
H
M
N
A
B
E
F
K
L
J
D
Z - M4 THD
(7 TYP.)
U
1.18+0.06/-0.02 30.0+1.5/-0.5
BuP
BuN
2.913 0.01
4.02 0.02
3.58 0.02
3.15 0.01
Inches
EuP
EuN
F
1.69
1.18
1.16
1.06
0.96
0.87
0.79
0.67
G
W
u
N
H
.110 TAB
AA
P
N
Millimeters
80.0 0.25
74.0 0.25
91.0 0.5
102 0.5
43.0
30.0
29.5
27.0
24.5
22.0
20.0
17.0
L
B
B
u
u
P E
N E
BvP
BvN
X
u
u
N
P
EvP
EvN
U
M
Q X
B
B
v
v
P E
N E
A
C
v
v
v
N
P
V
Dimensions
M
Q X
B
B
w
w
P E
N E
AA
AB
W
P
Q
R
S
U
V
X
Y
T
Z
w
w
P
N
AA
W
L
N
BwP
BwN
T
S
EwP
EwN
P
N
0.24 Rad.
M4 Metric
0.22 Dia.
Inches
0.65
0.55
0.47
0.43
0.39
0.33
0.32
0.24
0.08
0.28
R
V
w
Y DIA. (4 TYP.)
AB
P
K
G
J
Millimeters
Rad. 6.0
Dia. 5.5
E
16.5
14.0
12.0
11.0
10.0
M4
8.5
8.1
6.0
2.0
7.0
B
P
N
CM75TF-12H
Six-IGBT IGBTMOD™
H-Series Module
75 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-12H
is a 600V (V
Six-IGBT IGBTMOD™ Power
Module.
Type
CM
(70ns) Free-Wheel Diode
(20-25kHz)
Current Rating
CE(sat)
Amperes
CES
75
), 75 Ampere
Volts (x 50)
V
12
CES
311

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CM75TF-12H Summary of contents

Page 1

... Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-12H is a 600V ( Ampere CES Six-IGBT IGBTMOD™ Power Module. Type Current Rating ...

Page 2

... I = 75A, di /dt = –150A 75A, di /dt = –150A unless otherwise specified j Symbol Test Conditions R Per IGBT th(j-c) R Per FWDi th(j-c) R Per Module, Thermal Grease Applied th(c-f) Symbol CM75TF-12H T –40 to 150 j T –40 to 125 stg V 600 CES V 20 GES 150 150 310 d – 13 – ...

Page 3

... Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-12H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 150 V = 20V 100 COLLECTOR-EMITTER VOLTAGE (VOLTS) CE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 25° 150A 75A 30A GATE-EMITTER VOLTAGE (VOLTS) GE HALF-BRIDGE SWITCHING CHARACTERISTICS ...

Page 4

... Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-12H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT Single Pulse Per Unit Base = R = 0.4 C/W th(j- TIME, (s) 314 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi Single Pulse Per Unit Base = ...

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