CM300DY-24NF Powerex Inc, CM300DY-24NF Datasheet - Page 3

IGBT MOD DUAL 1200V 300A NF SER

CM300DY-24NF

Manufacturer Part Number
CM300DY-24NF
Description
IGBT MOD DUAL 1200V 300A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM300DY-24NF

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 300A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
70nF @ 10V
Power - Max
1130W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
300A
Power Dissipation Pd
1.13kW
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
300A
Collector Emitter Saturation Voltage Vce(sat)
2.5V
Current Rating
300A
Prx Availability
RequestQuote
Distributorinventory
View
Voltage
1200V
Current
300A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1016

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM300DY-24NF
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM300DY-24NF
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM300DY-24NF
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-24NF
Dual IGBTMOD™ NF-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
600
450
300
150
10
10
10
0
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
T
T
2
1
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
13
15
(TYPICAL)
(TYPICAL)
4
2
12
6
3
CE
EC
T
, (VOLTS)
j
8
4
, (VOLTS)
= 25
11
10
9
o
C
10
5
R
R
R
Symbol
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
-1
0
4
3
2
1
2
1
0
’Q
10
Q
D
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
= 25 °C unless otherwise specified
COLLECTOR-CURRENT, I
Per 1/2 Module, Thermal Grease Applied
= 0V
= 15V
Per FWDi 1/2 Module, T
T
T
Per IGBT 1/2 Module, T
150
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
T
C
10
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chips
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
300
Test Conditions
C
10
, (AMPERES)
1
450
C
C
C
CE
ies
oes
res
, (VOLTS)
C
C
Reference
600
10
Reference
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
1.0
j
= 25°C
GATE-EMITTER VOLTAGE, V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
t
8
d(on)
t
r
COLLECTOR-EMITTER
10
0.02
HALF-BRIDGE
Typ.
(TYPICAL)
(TYPICAL)
12
10
I
I
I
C
C
C
2
14
= 600A
= 300A
= 120A
t
0.046
C
d(off)
Max.
0.11
0.18
V
V
R
T
Inductive Load
, (AMPERES)
10
CC
GE
j
G
GE
16
= 125°C
= 1.0Ω
, (VOLTS)
= 600V
= ±15V
t
f
18
°C/W
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3

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