CM400DU-12F Powerex Inc, CM400DU-12F Datasheet - Page 4

• Manufacturer Part Number: CM400DU-12F
• Description: IGBT MOD DUAL 600V 400A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM400DU-12F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 110nF @ 10V
• Power - Max: 960W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 960W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM400DU-12F
Trench Gate Design Dual IGBTMOD™
400 Amperes/600 Volts
800
600
400
200
10
10
10
10
10
10
0
3
2
1
3
2
1
10
0
0
REVERSE RECOVERY CHARACTERISTICS
1
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
T
T
j
j
= 25 ° C
= 25°C
FORWARD CHARACTERISTICS
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
V
1
GE
FREE-WHEEL DIODE
= 20V
15
(TYPICAL)
(TYPICAL)
11
(TYPICAL)
2.0
10
2
7.5
2
8
E
10
, (AMPERES)
8.5
V
V
R
T
Inductive Load
9
9.5
j
CC
GE
G
= 25°C
3.0
= 3.1 Ω
EC
3
CE
= 300V
= 15V
I
t
, (VOLTS)
rr
rr
, (VOLTS)
4.0
10
4
3
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
3
2
1
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
I
GE
C
GE
COLLECTOR-CURRENT, I
= 400A
= 15V
= 0V
T
T
1000
j
j
200
= 25°C
= 125°C
CAPACITANCE VS. V
COLLECTOR-EMITTER
GATE CHARGE, V
GATE CHARGE, Q
10
V
0
CC
(TYPICAL)
(TYPICAL)
= 200V
2000
400
C
V
G
C
res
CC
10
, (nC)
, (AMPERES)
C
GE
3000
C
= 300V
1
600
oes
CE
ies
CE
, (VOLTS)
4000
800
10
2
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
3
2
1
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
1
-3
T
Per Unit Base
R
R
Single Pulse
T
j
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
GATE-EMITTER VOLTAGE, V
= 25°C
6
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
= 25°C
t
t
d(off)
d(on)
10
= 0.13°C/W (IGBT)
= 0.18°C/W (FWDi)
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
t
t
-2
f
r
(IGBT & FWDi)
HALF-BRIDGE
10
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
12
-1
-5
I
I
I
2
C
C
C
= 800A
= 400A
= 160A
14
C
V
V
R
T
Inductive Load
, (AMPERES)
GE
CC
GE
j
G
= 125°C
10
10
16
, (VOLTS)
= 3.1 Ω
= 300V
= 15V
-4
0
Rev. 12/09
18
10
10
10
20
-3
3
1
10
10
10
-1
-2
-3