CM400DU-12H Powerex Inc, CM400DU-12H Datasheet - Page 2

• Manufacturer Part Number: CM400DU-12H
• Description: IGBT MOD DUAL 600V 400A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM400DU-12H

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 35.2nF @ 10V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.13kW
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 7
• Rohs Compliant: Yes
• Module Configuration: Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400DU-12H
Dual IGBTMOD™ U-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
c
= 25 C)
j
= 25 C unless otherwise specified
j
V
R
R
= 25 C unless otherwise specified
V
Symbol
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
I
C
th(j-c)
I
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(c-f)
Q
j
Q
t
oes
EC
res
t
t
ies
rr
r
G
= 25 C unless otherwise specified
f
rr
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
I
I
= 400A, V
= 400A, V
E
E
Load Switching Operation
= 300V, I
V
V
V
= 400A, di
= 400A, di
I
C
V
Per FWDi 1/2 Module
Per IGBT 1/2 Module
CC
R
GE
I
V
CE
E
CE
GE1
G
= 40mA, V
= 400A, V
= 300V, I
= V
= V
= 1.6 , Resistive
= 10V, V
Test Conditions
Test Conditions
Test Conditions
GE
= V
C
GE
CES
GES
j
j
) does not exceed T
= 400A, V
) does not exceed T
E
E
Symbol
GE2
= 15V, T
V
V
= 15V, T
/dt = -800A/ s
/dt = -800A/ s
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
T
stg
–
–
–
CE
iso
GE
C
C
E
GE
c
j
GE
CE
= 15V,
= 400A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
j(max)
rating.
rating.
CM400DU-12H
Min.
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1130
2500
800*
800*
600
400
400
400
40
40
20
800
Typ.
Typ.
Typ.
–
–
6
2.4
2.6
–
–
–
–
–
–
–
–
–
0.96
–
–
0.020
250
600
350
300
160
35.2
19.2
Max.
Max.
Max.
1
0.5
7.5
3.0
–
–
2.6
5.2
–
0.11
0.18
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
C
C
mA
C/W
C/W
C/W
nC
ns
ns
ns
ns
ns
nf
nf
nf
A
C