CM400DU-5F Powerex Inc, CM400DU-5F Datasheet - Page 2

IGBT MOD DUAL 250V 400A F SER

CM400DU-5F

Manufacturer Part Number
CM400DU-5F
Description
IGBT MOD DUAL 250V 400A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM400DU-5F

Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
250V
Vce(on) (max) @ Vge, Ic
1.7V @ 10V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
110nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
250V
Power Dissipation Pd
890W
Collector Emitter Voltage V(br)ceo
250V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM400DU-5F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM400DU-5F
Manufacturer:
MIT
Quantity:
20 000
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
* T
C
measured point is just under chip.
c
c
= 25°C)
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
≤ 150°C)
c
= 25°C)
j
= 25 °C unless otherwise specified
j
R
V
R
R
= 25 °C unless otherwise specified
V
Symbol
Symbol
Symbol
R
th(j-c´)
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(c-f)
Q
j
Q
t
oes
EC
res
t
t
ies
rr
G
= 25 °C unless otherwise specified
r
f
rr
Q
D
Q
j
= 25 °C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
= 400A, V
= 400A, V
Load Switching Operation
= 100V, I
V
V
V
I
Per IGBT 1/2 Module*
C
V
Per FWDi 1/2 Module
Per IGBT 1/2 Module
I
CC
R
CE
GE
V
E
CE
GE1
G
= 40mA, V
= 400A, V
= 100V, I
= V
= V
= 6.3 , Resistive
= 10V, V
I
I
Test Conditions
Test Conditions
Test Conditions
GE
E
E
= V
C
GE
CES
GES
= 400A
= 400A
j
j
= 400A, V
) does not exceed T
) does not exceed T
Symbol
= 10V, T
GE2
V
V
= 10V, T
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
T
stg
iso
CE
C
C
E
GE
GE
c
j
GE
CE
= 10V,
= 400A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125°C
= 25°C
= 10V
j(max)
j(max)
rating.
rating.
CM400DU-5F
Min.
Min.
Min.
-40 to 150
-40 to 125
3.0
2500
800*
250
±20
400
400
800*
890
400
40
40
1500
16.0
Typ.
Typ.
Typ.
0.04
4.0
1.2
1.1
1100
110
850
400
500
300
Max.
Max.
Max.
1.0
0.5
5.0
1.7
2.0
7.0
3.8
0.14
0.24
0.08
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
Units
in-lb
in-lb
°C/W
°C/W
°C/W
°C/W
°C
°C
Volts
Volts
Volts
Volts
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf

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