CM400HA-28H Powerex Inc, CM400HA-28H Datasheet - Page 2

• Manufacturer Part Number: CM400HA-28H
• Description: IGBT MOD SGL 1400V 400A H SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM400HA-28H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 80nF @ 10V
• Power - Max: 2800W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 1.4kV
• Power Dissipation Pd: 2.8kW
• Collector Emitter Voltage V(br)ceo: 1.4kV
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400HA-28H
Single IGBTMOD™ H-Series Module
400 Amperes/1400 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M6 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 °C unless otherwise specified
j
= 25 °C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
t
ies
res
t
= 25 °C unless otherwise specified
rr
r
f
G
rr
j
= 25 °C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
V
C
CC
V
GE1
I
I
GE
= 400A, V
E
E
= 600V, I
V
= 400A, di
= 400A, di
V
V
I
I
C
= 0V, V
C
I
CC
= V
CE
GE
E
= 40mA, V
= 400A, V
= 400A, V
Test Conditions
Test Conditions
GE2
Test Conditions
= 800V, I
= V
= V
Per FWDi
Per IGBT
GE
C
CE
CES
GES
= 15V, R
= 400A, V
E
E
= 15V, T
= 10V, f = 1MHz
/dt = –800A/µs
/dt = –800A/µs
, V
, V
GE
CE
C
GE
GE
CE
= 400A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GE
= 0.78Ω
= 150°C
Symbol
V
V
V
T
I
I
= 15V
GES
RMS
CES
CM
P
I
FM
T
I
stg
–
–
–
C
F
d
j
Min.
Min.
Min.
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM400HA-28H
–40 to 150
–40 to 125
1400
2800
2500
800*
800*
±20
400
400
400
26
26
2040
2.95
Typ.
Typ.
Typ.
6.5
3.1
4.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.040
4.2**
Max.
Max.
Max.
0.045
0.09
300
500
350
500
300
2.0
0.5
8.0
3.8
–
16
–
–
80
28
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
°C
°C
°C/W
°C/W
°C/W
Volts
Volts
Volts
Volts
Units
Units
Units
mA
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns