MIO1200-25E10 IXYS, MIO1200-25E10 Datasheet

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MIO1200-25E10

Manufacturer Part Number
MIO1200-25E10
Description
MOD IGBT SGL SWITCH 2500V E10
Manufacturer
IXYS
Datasheet

Specifications of MIO1200-25E10

Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 1200A
Current - Collector (ic) (max)
1200A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
186nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
2500
Ic25, Tc = 25°c, Igbt, (a)
1650
Ic80, Tc = 80°c, Igbt, (a)
1200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.5
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1250
Rthjc, Max, Igbt, (k/w)
0.009
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1200
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIO1200-25E10
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
MIO1200-25E10
Quantity:
60
Symbol
V
V
I
I
t
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
ge
Collector emitter saturation voltage is given at chip level
Conditions
V
T
t
V
V
Conditions
I
I
V
V
Inductive load; T
V
V
I
p
C
C
C
C
CC
GE
CC
GE
CE
CE
CE
= 1 ms; T
= 1200 A; V
= 240 mA; V
= 1200 A; V
= 80°C
= 1250V; I
= 0 V
= 1800 V; V
= 2500 V; V
< 15 V; T
= 0 V; V
= 25 V; V
C
GE
C
= 80°C
VJ
GE
CE
GE
= 1200A; R
= ± 20 V; T
CE
VJ
< 125°C
CEM CHIP
GE
= 0 V; f = 1 MHz
= 1250 V; V
= 15 V; T
= 125°C; V
= V
= 0 V; T
GE
= < 2500 V;
T
G
VJ
VJ
VJ
= 1.5Ω; L
VJ
GE
= 125°C
= 125°C
= 25°C
GE
= 125°C
= ± 15 V;
(T
C'
G
E'
= ± 15 V
VJ
= 25°C, unless otherwise specified)
σ
= 100nH
E
C
min.
Characteristic Values
Maximum Ratings
6
1150
1250
13.7
12.2
typ. max.
365
250
980
345
186
2500
1200
2400
2.5
3.1
3.0
E
C
± 20
10
0.009 K/W
120 mA
500 nA
3.4
7.5
C
E
mJ
mJ
µC
nF
nF
nF
µs
ns
ns
ns
ns
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 1200-25E10
= 1200 A
= 2500 V
= 2.5 V
20110119a
1 - 6

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MIO1200-25E10 Summary of contents

Page 1

... MHz oes res 1200 1250 thJC Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 2500 ± 20 1200 2400 = < 2500 V; 10 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...

Page 2

... Resistance terminal to chip term-chip λ R per module; grease = 1 thCH Weight * ) · I resp term-chip C CE(sat) F © 2011 IXYS All rights reserved Maximum Ratings 1200 = 10 ms; half-sinewave 11000 p Characteristic Values min. typ. max. 1.75 1.8 1180 970 = 125°C VJ 1150 990 0.017 K/W ...

Page 3

... V [V] CE Fig. 3 Typical onstate characteristics, chip level 1250 [µC] g Fig. 5 Typical gate charge characteristics © 2011 IXYS All rights reserved Tvj = 25° 125 ° 1750 1200 ° MIO 1200-25E10 2400 2200 17 V 2000 15 V 1800 ...

Page 4

... C Fig. 9 Typical switching timesvs collector current 2.5 ≤ 1800 1.5 1 0.5 IC, Chip IC, Module 0 0 500 1000 1500 V [V] CE Fig. 11 Turn-off safe operating area (RBSOA) © 2011 IXYS All rights reserved off 2000 3000 V = 1250 1.5 ohm ± 125 ° 100 nH σ ...

Page 5

... I [A] F Fig. 13 Typical reverse recovery characteristics vs forward current 0.1 Z Diode th(j-c) 0.01 0.001 0.0001 0.001 0.01 0.1 t [s] Fig. 15 Thermal impedance vs time © 2011 IXYS All rights reserved rec V = 1250 1.5 ohm ± 125 ° 100 nH σ 2000 ...

Page 6

... Outline drawing Note: all dimensions are shown in mm © 2011 IXYS All rights reserved ' ' MIO 1200-25E10 20110119a ...

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