MIO1800-17E10 IXYS, MIO1800-17E10 Datasheet
Manufacturer Part Number
MIO1800-17E10
Description
MOD IGBT SGL SWITCH 1700V E10
Specifications of MIO1800-17E10
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 1800A
Current - Collector (ic) (max)
1800A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
166nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1700
Ic25, Tc = 25°c, Igbt, (a)
2500
Ic80, Tc = 80°c, Igbt, (a)
1800
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.3
Eoff, Typ, Tj = 125°c, Igbt, (mj)
670
Rthjc, Max, Igbt, (k/w)
0.009
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1800
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Part Number:
MIO1800-17E10
Part Number:
MIO1800-17E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
A
I
A
Symbol
t
µs
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
ge
Collector emitter saturation voltage is given at chip level
Conditions
V
T
t
Conditions
V
V
I
I
V
V
Inductive load; T
V
I
L
V
I
p
C
C
C
C
σ
C
GE
CC
GE
CE
CE
GE
CE
= 1 ms; T
= 1800 A; V
= 240 mA; V
= 1800 A; V
= 1800 A; R
= 60 nH
= 80°C
= 0 V
= 1000 V; V
= 1700 V; V
< 15 V; T
= 0 V; V
= ± 15 V; V
= 25 V; V
C
GE
= 80°C
VJ
GE
CE
GE
G
= ± 20 V; T
CE
CC
< 125°C
CEM CHIP
GE
= 0.82 Ω;
= 0 V; f = 1 MHz
= 900 V; V
= 15 V; T
VJ
= V
= 900 V;
= 0 V; T
= 125°C;
GE
= < 1700 V;
T
VJ
VJ
VJ
VJ
GE
= 125°C
= 125°C
= 25°C
= 125°C
= ± 15 V
(T
C'
G
E'
VJ
= 25°C, unless otherwise specified)
E
C
min.
Characteristic Values
4.5
Maximum Ratings
16.5
15.1
typ. max.
285
230
950
240
530
670
166
1700
1800
3600
2.3
2.6
7.0
E
C
± 20
10
0.009 K/W
120 mA
500 nA
2.6
2.9
6.5
C
E
mJ
mJ
µC
nF
nF
nF
ns
ns
ns
ns
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 1800-17E10
= 1800 A
= 1700 V
= 2.3 V
20110119a
1 - 6
Related parts for MIO1800-17E10
MIO1800-17E10 Summary of contents
... MHz oes res 1800 900 thJC Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 1700 ± 20 1800 3600 = < 1700 V; Characteristic Values 25°C, unless otherwise specified) VJ min ...
... Resistance terminal to chip term-chip λ R per module; grease = 1 thCH Weight * ) · I resp term-chip C CE(sat) F © 2011 IXYS All rights reserved Maximum Ratings 1800 = 10 ms; half-sinewave 16500 p Characteristic Values min. typ. max. 1.65 1.70 1470 870 = 125°C VJ 770 530 0.017 K/W ...
... V [V] CE Fig. 3 Typical onstate characteristics, chip level 900 [µC] g Fig. 5 Typical gate charge characteristics © 2011 IXYS All rights reserved ° 125 ° 1300 1800 ° MIO 1800-17E10 3600 3200 17V 15V 2800 13V ...
... C Fig. 9 Typical switching timesvs collector current 2.5 ≤ 1300 1.5 1 0.5 Chip Module 0 0 500 1000 V [V] CE Fig. 11 Turn-off safe operating area (RBSOA) © 2011 IXYS All rights reserved on 3000 4000 3000 4000 1500 2000 MIO 1800-17E10 2 900 1800 ± 125 °C ...
... I [A] F Fig. 13 Typical reverse recovery characteristics vs forward current 0.1 Z Diode th(j-c) 0.01 0.001 0.0001 0.001 0.01 0.1 t [s] Fig. 15 Thermal impedance vs time © 2011 IXYS All rights reserved 2000 I RM 1500 Q RR 1000 500 0 4000 Z IGBT th(j- MIO 1800-17E10 900 ...
... Outline drawing Note: all dimensions are shown in mm © 2011 IXYS All rights reserved ' ' MIO 1800-17E10 20110119a ...
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