MIO2400-17E10 IXYS, MIO2400-17E10 Datasheet
Manufacturer Part Number
MIO2400-17E10
Description
MOD IGBT SGL SWITCH 1700V E10
Specifications of MIO2400-17E10
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 2400A
Current - Collector (ic) (max)
2400A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
230nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Vces, (v)
1700
Ic25, Tc = 25°c, Igbt, (a)
3300
Ic80, Tc = 80°c, Igbt, (a)
2400
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.3
Eoff, Typ, Tj = 125°c, Igbt, (mj)
980
Rthjc, Max, Igbt, (k/w)
0.007
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
2400
Rthjc, Max, Diode, (k/w)
0.012
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
MIO2400-17E10
Part Number:
MIO2400-17E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
Symbol
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
ge
Collector emitter saturation voltage is given at chip level
Conditions
V
T
t
V
V
Conditions
I
I
V
V
V
I
Inductive load; T
V
I
L
p
C
C
C
C
C
σ
GE
CC
GE
CE
CE
CE
GE
= 1 ms; T
= 2400 A; V
= 240 mA; V
= 2400 A; V
= 2400 A; R
= 60 nH
= 80°C
= 0 V
= 1000 V; V
= 1700 V; V
< 15 V; T
= 0 V; V
= 25 V; V
= ± 15 V; V
C
GE
= 80°C
VJ
GE
CE
GE
G
= ± 20 V; T
CE
CC
< 125°C
CEM CHIP
GE
= 0 V; f = 1 MHz
= 0.56 Ω;
= 900 V; V
= 15 V; T
VJ
= V
= 900 V;
= 0 V; T
= 125°C;
GE
= < 1700 V;
T
VJ
VJ
VJ
VJ
GE
= 125°C
= 25°C
= 125°C
= 125°C
= ± 15 V
(T
C'
G
E'
VJ
= 25°C, unless otherwise specified)
E
C
min.
Characteristic Values
4.5
Maximum Ratings
1050
typ. max.
340
260
270
600
980
230
1700
2400
4800
E
C
2.3
2.6
± 20
22
10
22
10
0.007 K/W
120 mA
500 nA
2.6
2.9
6.5
C
E
mJ
mJ
µC
nF
nF
nF
µs
ns
ns
ns
ns
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 2400-17E10
= 2400 A
= 1700 V
= 2.3 V
20110119a
1 - 6
Related parts for MIO2400-17E10
MIO2400-17E10 Summary of contents
... MHz oes res 2400 900 thJC Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 1700 ± 20 2400 4800 = < 1700 V; 10 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
... Resistance terminal to chip term-chip λ R per module; grease = 1 thCH Weight * ) · I resp term-chip C CE(sat) F © 2011 IXYS All rights reserved Maximum Ratings 2400 = 10 ms; half-sinewave 22000 p Characteristic Values min. typ. max. 1.65 1.70 1880 890 = 125°C VJ 1025 720 0.012 K/W ...
... V [V] CE Fig. 3 Typical onstate characteristics, chip level 900 [µC] g Fig. 5 Typical gate charge characteristics © 2011 IXYS All rights reserved ° 125 ° 1300 2400 ° MIO 2400-17E10 4800 17V 4400 15V 4000 13V ...
... Fig. 9 Typical switching times vs collector current 2.5 ≤ 1300 1.5 1 0.5 IC, Chip IC, Module 0 0 500 1000 V [V] CE Fig. 11 Turn-off safe operating area (RBSOA) © 2011 IXYS All rights reserved E on 4000 5000 4000 5000 1500 2000 MIO 2400-17E10 3 900 2400 ± ...
... I [A] F Fig. 13 Typical reverse recovery characteristics vs forward current 0.1 Z Diode th(j-c) 0.01 0.001 0.0001 0.001 0.01 0.1 t [s] Fig. 15 Thermal impedance vs time © 2011 IXYS All rights reserved 2500 I RM 2000 Q 1500 RR 1000 500 0 5000 Z IGBT th(j- MIO 2400-17E10 1000 ...
... Outline drawing Note: all dimensions are shown in mm © 2011 IXYS All rights reserved ' ' MIO 2400-17E10 20110119a ...
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