MIO600-65E11 IXYS, MIO600-65E11 Datasheet
Manufacturer Part Number
MIO600-65E11
Description
IGBT MODULE SGL 600A E11
Specifications of MIO600-65E11
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
6500V
Vce(on) (max) @ Vge, Ic
4.2V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
150nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E11
Vces, (v)
6500
Ic25, Tc = 25°c, Igbt, (a)
840
Ic80, Tc = 80°c, Igbt, (a)
600
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
4.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
3250
Rthjc, Max, Igbt, (k/w)
0.011
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
600
Rthjc, Max, Diode, (k/w)
0.021
Package Style
E11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
MIO600-65E11
Part Number:
MIO600-65E11
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
Symbol
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
C85
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
ge
Collector emitter saturation voltage is given at chip level
Conditions
V
T
t
V
V
Conditions
I
I
V
V
Inductive load; T
V
I
V
I
p
C
C
C
C
C
GE
CC
GE
CE
CE
GE
CE
= 1 ms; T
= 600 A; V
= 240 mA; V
= 600 A; V
= 600 A; L
= 85°C
= 0 V
= 4400 V; V
= 6500 V; V
< 15 V; T
= 0 V; V
= ± 15 V; V
= 25 V; V
C
GE
σ
CE
GE
= 85°C
VJ
GE
= 280 nH
= ± 20 V; T
CE
CC
= 3600 V; V
= 15 V; T
< 125°C
CEM CHIP
GE
= 0 V; f = 1 MHz
VJ
= V
= 3600 V;
= 0 V; T
= 125°C;
GE
= < 6500 V;
T
VJ
VJ
VJ
VJ
= 25°C
GE
= 125°C
= 125°C
= 125°C
= ± 15 V
(T
C'
G
E'
R
R
R
R
R
R
3
2
1
G
G
G
G
G
G
VJ
= 3.9 Ω
= 3.9 Ω
= 2.7 Ω
= 2.7 Ω
= 3.9 Ω
= 2.7 Ω
= 25°C, unless otherwise specified)
E
C
4
5
min.
Characteristic Values
Maximum Ratings
6
1500
4250
3250
7.57
1.46
9.65
typ. max.
620
270
930
150
4.2
5.4
E
C
6
7
0.011 K/W
6500
1200
± 20
600
120 mA
500 nA
10
8
C
E
mJ
mJ
µC
9
8
nF
nF
nF
µs
ns
ns
ns
ns
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ
good EMC
cycling capacity
MIO 600-65E11
= 600 A
= 6500 V
= 4.2 V
20110119a
1 - 5
Related parts for MIO600-65E11
MIO600-65E11 Summary of contents
... C ies MHz oes res 600 3600 thJC Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings = < 6500 V; Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
... L Module stray inductance terminal σ σ σ σ σ Resistance terminal to chip term-chip λ R per module; grease = 1 thCH Weight © 2011 IXYS All rights reserved Maximum Ratings = 10 ms; half-sinewave 6000 p Characteristic Values min. typ. max. 3.2 3.4 930 2200 = 125°C ...
... V [V] CE Fig. 3 Typical on-state characteristics, chip level 3600 [µC] g Fig. 5 Typical gate charge characteristics © 2011 IXYS All rights reserved 1200 1000 ° 1200 1000 125 ° 15V 1000 100 = 4400 600 ° MIO 600-65E11 17V 15V 13V 800 ...
... ≤ 280 2.7 ohm, L σ Goff 2 1.5 1 0.5 Chip Module 0 0 1000 2000 3000 4000 5000 V [V] CE Fig. 11 Turn-off safe operating area (RBSOA) © 2011 IXYS All rights reserved 0. 1200 10 1 0.1 1200 1200 1000 800 600 400 200 6000 7000 Fig ...
... L σ 1000 800 600 400 200 0 0 1000 2000 3000 4000 5000 6000 7000 V [V] R Fig. 15 Safe operating area diode (SOA) Outline drawing © 2011 IXYS All rights reserved 2500 E rec 2000 1500 Q rr 1000 I rr 500 + 403 F 0 1200 ...
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