MIO1200-33E11 IXYS, MIO1200-33E11 Datasheet
MIO1200-33E11
Manufacturer Part Number
MIO1200-33E11
Description
IGBT MODULE SGL 1200A E11
Manufacturer
IXYS
Datasheet
1.MIO1200-33E11.pdf
(3 pages)
Specifications of MIO1200-33E11
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
3300V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 1200A
Current - Collector (ic) (max)
1200A
Current - Collector Cutoff (max)
120mA
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E11
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
3300
Ic25, Tc = 25°c, Igbt, (a)
1650
Ic80, Tc = 80°c, Igbt, (a)
1200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
3.1
Eoff, Typ, Tj = 125°c, Igbt, (mj)
2000
Rthjc, Max, Igbt, (k/w)
0.0085
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1200
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Input Capacitance (cies) @ Vce
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MIO1200-33E11
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
MIO1200-33E11
Quantity:
60
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
Symbol
V
V
I
I
E
E
R
① Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
CES
GES
CE(sat)
GE(th)
on
off
thJC
①
Conditions
V
T
t
V
V
Conditions
I
I
V
V
Inductive load; T
V
p
C
C
C
CC
GE
CC
GE
CE
CE
= 1 ms; T
= 1200 A; V
= 240 mA; V
= 80°C
= 1800V; I
= 0 V
= 2500 V; V
= 3300 V; V
< 15 V; T
= 0 V; V
C
GE
C
= 80°C
VJ
GE
= 1200A; R
= ± 20 V; T
CE
VJ
< 125°C
CEM CHIP
GE
= 15 V; T
= 125°C; V
= V
= 0 V; T
GE
= < 3300 V;
T
G
VJ
VJ
VJ
= 1Ω; L
VJ
GE
= 125°C
= 125°C
= 25°C
= 125°C
= ± 15 V;
(T
C'
G
E'
Advanced Technical Information
3
2
1
VJ
σ
= 100nH
= 25°C, unless otherwise specified)
E
C
5
4
min.
Characteristic Values
6
Maximum Ratings
1750
2000
typ.
3.1
3.8
3300
1200
2400
E
C
± 20
6
7
10
0.0085 K/W
max.
120 mA
500 nA
8
C
E
mJ
mJ
9
8
µs
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 1200-33E11
= 1200 A
= 3300 V
= 3.1 V
1 - 3
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MIO1200-33E11 Summary of contents
Page 1
... GES Inductive load 125° 1800V 1200A off R thJC ① Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Advanced Technical Information Maximum Ratings 3300 ± 20 1200 2400 = < ...
Page 2
... Maximum Ratings +125 -40...+125 -40...+125 Characteristic Values min. typ. max. terminal to base 26 terminal to terminal 26 terminal to base 56 terminal to terminal 56 10500 5100 600 18 0.12 W/m•K 0.006 1500 · I term-chip F MIO 1200-33E11 µC mJ °C °C ° Ω m K/W g © 2004 IXYS All rights reserved ...
Page 3
... Outline drawing Note: all dimensions are shown in mm © 2004 IXYS All rights reserved Advanced Technical Information MIO 1200-33E11 ...