GA200SA60U Vishay, GA200SA60U Datasheet

IGBT UFAST 600V 100A SOT227

GA200SA60U

Manufacturer Part Number
GA200SA60U
Description
IGBT UFAST 600V 100A SOT227
Manufacturer
Vishay
Datasheets

Specifications of GA200SA60U

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
16.5nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*GA200SA60U
VS-GA200SA60U
VS-GA200SA60U
VSGA200SA60U
VSGA200SA60U

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA200SA60U
Manufacturer:
IR
Quantity:
1 000
Part Number:
GA200SA60U
Quantity:
62
Company:
Part Number:
GA200SA60U
Quantity:
70 000
Part Number:
GA200SA60UP
Quantity:
63
Part Number:
GA200SA60UPBF
Manufacturer:
AVX
Quantity:
25 000
Document Number: 94364
Revision: 02-Sep-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
Reverse voltage avalanche energy
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case
Case to sink, flat, greased surface
Weight of module
V
CE(on)
V
V
CES
I
GE
C
(typical)
SOT-227
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
G
For technical questions, contact:
n-channel
1.92 V
600 V
100 A
15 V
SYMBOL
SYMBOL
T
R
R
V
V
E
J
V
E
C
I
I
, T
P
thCS
ISOL
thJC
CES
I
CM
ARV
LM
GE
C
D
Stg
T
T
V
L = 10 µH, R
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 minute
T
T
6-32 or M3 screw
C
C
C
C
CC
= 25 °C
= 100 °C
= 25 °C
= 100 °C
= 80 % (V
TEST CONDITIONS
FEATURES
• Ultrafast: Optimized for minimum saturation
• Very low conduction and switching losses
• Fully isolate package (2500 V
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
indmodules@vishay.com
TYP.
0.05
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode
conversion: UPS, SMPS, welding, induction heating
30
G
-
CES
= 2.0 Ω,
), V
GE
= 20 V,
Vishay High Power Products
MAX.
- 55 to + 150
0.25
-
-
GA200SA60UP
AC/RMS
1.3 (12)
MAX.
2500
± 20
600
200
100
400
400
160
500
200
)
www.vishay.com
(lbf ⋅ in)
UNITS
UNITS
N ⋅ m
°C/W
mJ
°C
W
V
A
V
V
g
1

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GA200SA60U Summary of contents

Page 1

... Any terminal to case minute ISOL ° 100 ° Stg 6- screw SYMBOL TYP thJC R 0.05 thCS 30 For technical questions, contact: indmodules@vishay.com GA200SA60UP Vishay High Power Products ) AC/RMS MAX. 600 200 100 400 = 400 ± 20 160 2500 500 200 - 150 1.3 (12) MAX. 0. www.vishay.com UNITS V ...

Page 2

... GA200SA60UP Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Emitter to collector breakdown voltage Temperature coeff. of breakdown voltage ΔV Collector to emitter saturation voltage Gate threshold voltage Temperature coeff. of threshold voltage Forward transconductance Zero gate voltage collector current Gate to emitter leakage current ...

Page 3

... Fundamental) RMS µs pulse width 2.5 3.0 3 µs pulse width 7.0 8.0 For technical questions, contact: indmodules@vishay.com GA200SA60UP Vishay High Power Products For both: Duty cycle 125 ° °C sink Gate drive as specified Power dissipation = 140 W 10 100 200 150 100 ...

Page 4

... GA200SA60UP Vishay High Power Products 0. 0.02 0. 0.01 0.001 0.00001 Fig Maximum Effektive Transient Thermal Impedance, Junction to Case 30 000 MHz ies ge 25 000 res oes ce 20 000 C ies 15 000 C oes 10 000 5000 C res Collector to Emitter Voltage (V) CE Fig Typical Capacitance vs. Collector to Emitter Voltage ...

Page 5

... Fig. 14b - Switching Loss Waveforms For technical questions, contact: indmodules@vishay.com GA200SA60UP Vishay High Power Products 1000 (max will increase to obtain rated I d Fig. 13a - Clamped Inductive Load Test Circuit 480 µF 960 V Fig. 13b - Pulsed Collector Current Test Circuit ...

Page 6

... GA200SA60UP Vishay High Power Products ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION 2 (G) Dimensions Packaging information www.vishay.com 6 Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A A 200 Insulated Gate Bipolar Transistor (IGBT) - Generation 4, IGBT silicon, DBC construction - Current rating (200 = 200 A) ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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