GB35XF120K Vishay, GB35XF120K Datasheet

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GB35XF120K

Manufacturer Part Number
GB35XF120K
Description
MODULE IGBT 1200V 35A ECONO2 6PK
Manufacturer
Vishay
Datasheet

Specifications of GB35XF120K

Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
100µA
Input Capacitance (cies) @ Vce
3.475nF @ 30V
Power - Max
284W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ECONO2
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
50 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Mounting Style
Screw
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GB35XF120K
Quantity:
82
Document Number: 93651
Revision: 01-Sep-08
查询"GB35XF120K"供应商
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
Diode continuous forward current
Pulsed diode maximum forward current
Gate to emitter voltage
Maximum power dissipation
(IGBT and DIODE)
Maximum operating junction temperature
Storage temperature range
Isolation voltage
t
sc
I
V
C
CE(on)
at T
at T
V
J
C
CES
= 150 °C
(typical)
= 80 °C
ECONO2 6PACK
IGBT Sixpack Module, 35 A
For technical questions, contact: ind-modules@vishay.com
> 10 µs
1200 V
2.40 V
35 A
SYMBOL
V
V
V
T
I
I
I
P
ISOL
CES
CM
T
I
LM
I
FM
Stg
GE
C
F
D
J
T
T
T
T
T
T
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
FEATURES
• Low diode V
• 10 µs short circuit capability
• Square RBSOA
• Low V
• HEXFRED
• Positive V
• Ceramic DBC substrate
• Low stray inductance design
• Speed 8 to 60 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial market
BENEFITS
• Benchmark efficiency for motor control
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Low junction to case thermal resistance
• UL approved E78996
recovery characteristics
CE(on)
CE(on)
®
non punch through IGBT technology
F
Vishay High Power Products
antiparallel diode with ultrasoft reverse
temperature coefficient
AC 2500 (minimum)
- 40 to + 125
MAX.
1200
± 20
100
100
100
284
159
150
50
35
50
35
GB35XF120K
www.vishay.com
UNITS
°C
W
V
A
V
V
RoHS
COMPLIANT
1

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GB35XF120K Summary of contents

Page 1

... ° ° Stg V ISOL For technical questions, contact: ind-modules@vishay.com GB35XF120K Vishay High Power Products F non punch through IGBT technology CE(on) ® antiparallel diode with ultrasoft reverse temperature coefficient CE(on) MAX. 1200 50 35 100 100 50 35 100 ± 20 284 159 ...

Page 2

... GB35XF120K 查询"GB35XF120K"供应商 Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage ΔV Collector to emitter voltage Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current Diode forward voltage drop ...

Page 3

... V CE (V) Fig Typical IGBT Output Characteristics T = 125 ° µ Document Number: 93651 Revision: 01-Sep-08 IGBT Sixpack Module SYMBOL MIN thJC - R - thCS 2 For technical questions, contact: ind-modules@vishay.com GB35XF120K Vishay High Power Products TYP. MAX. UNITS - 0.44 - 0.80 0. 3.3 170 - 17. 35A 70A (V) Fig Typical V vs ...

Page 4

... GB35XF120K 查询"GB35XF120K"供应商 Vishay High Power Products 8000 7000 E ON 6000 5000 4000 3000 2000 1000 (A) Fig Typical Energy Loss vs 125 ° 400 µ Ω 1000 td OFF t F 100 (A) Fig Typical Switching Time vs 125 ° 400 µ Ω ...

Page 5

... Document Number: 93651 Revision: 01-Sep-08 IGBT Sixpack Module 120 140 160 20 µs 100 µ 1000 10000 For technical questions, contact: ind-modules@vishay.com GB35XF120K Vishay High Power Products 1000 100 100 1000 V CE (V) Fig Reverse Bias SOA T = 150 ° 400 25°C 350 125° ...

Page 6

... GB35XF120K 查询"GB35XF120K"供应商 Vishay High Power Products 100 4.7 Ω Ω (A) Fig Typical Diode 125 °C J www.vishay.com 6 IGBT Sixpack Module Ω Ω vs 500 1000 1500 di F /dt (A/µs) Fig Typical Diode I vs. dI /dt For technical questions, contact: ind-modules@vishay.com ...

Page 7

... Ci= τi/Ri Ci i/Ri 1E-4 1E Rectangular Pulse Duration (sec τ J τ J τ 1 τ 1 Ci= τi/Ri Ci= i/Ri 1E-4 1E Rectangular Pulse Duration (sec) For technical questions, contact: ind-modules@vishay.com GB35XF120K Vishay High Power Products R τi (sec) Ri (°C/ τ 0.086 0.000561 C τ τ 0.354 0.039382 2 τ 2 Notes: 1 ...

Page 8

... GB35XF120K 查询"GB35XF120K"供应商 Vishay High Power Products D.U. Fig. C.T.1 - Gate Charge Circuit (Turn-Off D.U. Fig. C.T.2 - RBSOA Circuit www.vishay.com 8 IGBT Sixpack Module 1000 D.U. Fig. C.T.5 - Resistive Load Circuit For technical questions, contact: ind-modules@vishay.com Driver D + 900 V ...

Page 9

... IGBT Generation 5 NPT - Current rating ( Circuit configuration (X = Sixpack or three phase inverter) - Package (F = ECONO2) - Voltage rating (120 = 1200 V) - Ultrafast (Speed kHz) For technical questions, contact: ind-modules@vishay.com GB35XF120K Vishay High Power Products 800 120 700 105 600 90 500 75 TEST CURRENT 400 60 90% test current ...

Page 10

... GB35XF120K 查询"GB35XF120K"供应商 Vishay High Power Products CIRCUIT CONFIGURATION 27 (P+) 43 (N-) Dimensions Part marking information www.vishay.com 10 IGBT Sixpack Module LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com http://www.vishay.com/doc?95090 http://www.vishay.com/doc?95089 Document Number: 93651 Revision: 01-Sep-08 ...

Page 11

... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product ...

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