FMG2G50US120 Fairchild Semiconductor, FMG2G50US120 Datasheet
FMG2G50US120
Specifications of FMG2G50US120
FMG2G50US120_NL
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FMG2G50US120 Summary of contents
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... Fairchild Semiconductor Corporation =100° 15V 2 50A 25°C unless otherwise noted C Description @ T = 100° 1minute IGBT Package Code : 7PM-GA E1/ Internal Circuit Diagram FMG2G50US120 Units 1200 V ± 100 100 A 320 °C -40 to +150 °C -40 to +125 2500 V 4.0 N.m 4.0 N.m FMG2G50US120 Rev. A ...
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... Min. Typ. Max. = 25°C -- 2.3 3.0 = 125° 25°C -- 160 -- = 125°C -- 220 -- = 25° 125° 25°C -- 2320 -- = 125°C -- 3960 -- Typ. Max. Units °C/W -- 0.39 °C/W -- 0.47 0.035 -- °C/W 240 -- g FMG2G50US120 Rev Unit ...
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... Fig 2. Typical Saturation Voltage Characteristics Common Emitter 20V V GE 15V 12V 10V Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter Fig 6. Turn-Off Characteristics vs. Collector Current 20V 15V 12V V = 10V 15V 80A 50A I = 30A Ω = ± ℃ ℃℃ = 125 ℃ ------ FMG2G50US120 Rev ...
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... G Fig 10. Switching Loss vs. Gate Resistance Common Cathode Fig 12. Forward Characteristics(diode) Common Emitter V = 600 ± ℃ ℃℃ 125 ℃ ------ Ω] G Gate Resistance Common Emitter V = 600 ± ℃ ℃℃ 125 ------ ℃ Ω ℃ 125 ℃ Forward Voltage, V [V] F FMG2G50US120 Rev ...
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... Common Cathode di/dt = 700A/ ㎲ ℃ 125 ------- ℃ Forward Current, I Fig 13. Reverse Recovery Characteristics(diode) ©2004 Fairchild Semiconductor Corporation [A] F Dimensions in Millimeters FMG2G50US120 Rev. A ...
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... Package Dimension ©2004 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G50US120 Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...