FMG2G75US120 Fairchild Semiconductor, FMG2G75US120 Datasheet

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FMG2G75US120

Manufacturer Part Number
FMG2G75US120
Description
IGBT POWER MOD 1200V 75A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMG2G75US120

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
3mA
Power - Max
445W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-
Other names
FMG2G75US120_NL
FMG2G75US120_NL

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Part Number:
FMG2G75US120
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©2004 Fairchild Semiconductor Corporation
FMG2G75US120
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
• Short Circuit Rated Time; 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Weldings
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
P
T
T
T
V
Mounting Torque
C
CM (1)
F
FM
SC
J
STG
CES
GES
D
ISO
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M5
CE(sat)
= 2.6 V @ I
C
=100°C, V
Description
T
C
C
GE
= 25°C unless otherwise noted
= 75A
= 15V
@ T
@ AC 1minute
C
= 100°C
C1
Package Code : 7PM-GA
Internal Circuit Diagram
FMG2G75US120
-40 to +150
-40 to +125
G1
1200
2500
± 20
150
150
445
4.0
4.0
75
75
10
E1
E1/C2
G2
Units
E2
IGBT
N.m
N.m
us
°C
°C
W
V
V
A
A
A
A
V
FMG2G75US120 Rev. A
E2

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FMG2G75US120 Summary of contents

Page 1

... Fairchild Semiconductor Corporation =100° 15V 2 75A 25°C unless otherwise noted C Description @ T = 100° 1minute IGBT Package Code : 7PM-GA E1/ Internal Circuit Diagram FMG2G75US120 Units 1200 V ± 150 150 A 445 °C -40 to +150 °C -40 to +125 2500 V 4.0 N.m 4.0 N.m FMG2G75US120 Rev. A ...

Page 2

... Min. Typ. Max. = 25°C -- 2.3 3.0 = 125° 25°C -- 150 -- = 125°C -- 225 -- = 25° 125° 25°C -- 3525 = 125°C -- 6863 -- Typ. Max. Units °C/W -- 0.28 °C/W -- 0.34 0.035 -- °C/W 240 -- g FMG2G75US120 Rev Unit ...

Page 3

... Characteristics Common Emitter 20V 15V 12V 10V Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter Fig 6. Turn-Off Characteristics vs. Collector Current = 25 ℃ 20V 15V 12V V = 10V 15V 150A 100A 75A I = 40A ± Ω ℃ ℃℃ 125 ------ ℃ FMG2G75US120 Rev ...

Page 4

... Fig 8. Turn-on Characteristics vs. Gate Resistance 2 0 Common Emitter Ω] G Fig 10. Switching Loss vs. Gate Resistance Common Cathode Fig 12. Forward Characteristics(diode) = 600 ± ℃ ℃℃ 125 ------ ℃ Ω 600 ± ℃ ℃℃ 125 ℃ ------ Ω ℃ 125 ℃ Forward Voltage, V [V] F FMG2G75US120 Rev ...

Page 5

... Common Cathode di/dt = 1000A/ ㎲ ℃ 125 ------- ℃ Forward Current, I Fig 13. Reverse Recovery Characteristics(diode) ©2004 Fairchild Semiconductor Corporation [A] F Dimensions in Millimeters FMG2G75US120 Rev. A ...

Page 6

... Package Dimension ©2004 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G75US120 Rev. A ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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