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FMS7G10US60
FMS7G10US60 | |
|---|---|
| Manufacturer Part Number | FMS7G10US60 |
| Description | IGBT 600V 10A 25PM-AA |
| Manufacturer | Fairchild Semiconductor |
| FMS7G10US60 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
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- If you still have any questions - please contact us
Specifications of FMS7G10US60 | |||
|---|---|---|---|
| Configuration | Three Phase Inverter with Brake | Voltage - Collector Emitter Breakdown (max) | 600V |
| Vce(on) (max) @ Vge, Ic | 2.7V @ 15V, 10A | Current - Collector (ic) (max) | 10A |
| Current - Collector Cutoff (max) | 250µA | Input Capacitance (cies) @ Vce | 0.71nF @ 30V |
| Power - Max | 66W | Input | Three Phase Bridge Rectifier |
| Ntc Thermistor | Yes | Mounting Type | Chassis Mount |
| Package / Case | 25PM-AA | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Igbt Type | - | ||
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PrevNext
Bipolar Power Transistors – General Purpose Transistors (Continued)
I
(A) V
(V) V
(V) V
Products
C
CEO
CBO
1
100
100
MJD29C
1
250
350
KSH47
1
250
350
MJD47
1
400
500
KSH50
1
400
500
MJD50
2
50
50
FJD3076
2
400
500
KSC3233
3
40
40
KSH31
3
100
100
KSH31C
3
100
100
MJD31C
5
25
40
KSH200
6
100
100
KSH41C
6
100
100
MJD41C
8
80
–
KSH44H11
8
80
–
MJD44H11
10
60
70
KSH3055
10
60
70
MJD3055
TO-252(DPAK) PNP Configuration
0.5
300
300
KSH350
0.5
300
300
MJD350
1
40
40
KSH30
3
40
40
KSH32
3
100
100
KSH32C
3
100
100
MJD32C
5
25
40
KSH210
5
25
40
MJD210
6
100
100
KSH42C
8
80
–
KSH45H11
8
80
–
MJD45H11
10
60
70
KSH2955
10
60
70
MJD2955
2
TO-263(D
PAK) PNP Configuration
3
60
60
KSB834W
www.fairchildsemi.com
Discrete Power Products –
h
FE
(V) P
(W)
EBO
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@I
(A) @V
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Max
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240
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75
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60
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0.5
2-88
Bipolar Transistors and JFETs
V
CE (sat)
(V) Typ (V) Max (V) @I
(A) @I
CE
C
B
4
–
0.7
1
0.125
10
–
1
1
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–
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1
0.125
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1.2
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0.375
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0.375
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0.375
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0.05
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–
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–
1.1
4
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–
0.5
1
3
0.3
(A)
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