FMG2G50US60 Fairchild Semiconductor, FMG2G50US60 Datasheet

no-image

FMG2G50US60

Manufacturer Part Number
FMG2G50US60
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMG2G50US60

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMG2G50US60
Manufacturer:
FAIRCHILD
Quantity:
452
Part Number:
FMG2G50US60
Quantity:
55
©2001 Fairchild Semiconductor Corporation
FMG2G50US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
T
P
T
T
V
Mounting
Torque
C
CM (1)
F
FM
stg
SC
J
CES
GES
D
iso
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
CE(sat)
C
= 100°C, V
= 2.2 V @ I
Description
GE
T
= 15V
C
C
= 50A
= 25°C unless otherwise noted
@ T
@ T
@ T
@ T
@ AC 1minute
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
C1
Package Code : 7PM-GA
Internal Circuit Diagram
FMG2G50US60
G1
-40 to +150
-40 to +125
E1
2500
± 20
600
100
100
250
2.0
2.0
50
50
10
E1/C2
G2
September 2001
E2
IGBT
E2
FMG2G50US60 Rev. A
Units
N.m
N.m
us
°C
°C
W
V
V
A
A
A
A
V

Related parts for FMG2G50US60

FMG2G50US60 Summary of contents

Page 1

... C Description @ T = 25° 100° 100° 25° 1minute September 2001 IGBT Package Code : 7PM-GA E1/ Internal Circuit Diagram FMG2G50US60 Units 600 V ± 100 100 250 W °C -40 to +150 °C -40 to +125 2500 V 2.0 N.m 2.0 N.m FMG2G50US60 Rev. A ...

Page 2

... V = 15V -- G GE Inductive Load 125° 300 15V 100° 300 50A 15V GE -- Typ. Max. Units -- -- V 0.6 -- V/°C -- 250 uA ± 100 -- nA 6.0 8.5 V 2.2 2.8 V 3460 -- pF 480 -- pF 140 -- 110 200 250 -- 145 210 FMG2G50US60 Rev. A ...

Page 3

... 100 A/us Parameter (Conductive grease applied) Min. Typ. Max 25°C -- 1.9 2 100° 25° 130 100°C -- 130 -- 25° 6 100° 25°C -- 225 422 100°C -- 455 -- C Typ. Max. Units °C/W -- 0.5 °C/W -- 1.0 °C/W 0. 190 FMG2G50US60 Rev. A Units ...

Page 4

... Power Dissipation = 70W 0 100 150 [ ] C Fig 4. Load Current vs. Frequency 20 Common Emitter 100A [V] GE Fig 6. Saturation Voltage vs 15V = 25 = 125 ------ 1 10 Collector - Emitter Voltage 300V CC Load Current : peak of square wave = 100 1 10 100 1000 Frequency [KHz] = 125 C 100A 50A I = 30A Gate - Emitter Voltage FMG2G50US60 Rev ...

Page 5

... T T Ton Tr 100 100 [A] C Fig 12. Turn-Off Characteristics vs. = 300V +/- 15V Ton 0 = 125 Ω Gate Resistance 300V +/- 15V GE = 50A 125 C Eoff Eon Eoff 10 Ω Gate Resistance 300V +/- 15V CC GE Ω 125 C C Toff Tf Toff Collector Current, I [A] C Collector Current FMG2G50US60 Rev. A 100 ...

Page 6

... Fig 16. Turn-Off SOA Characteristics 1 0.1 0.01 1E-3 500 600 700 -5 10 [V] CE Fig 18. Transient Thermal Impedance Ω 300 100 V CC 200 120 Gate Charge Safe Operating Area 20V 100 100 1000 Collector-Emitter Voltage IGBT : DIODE : - Rectangular Pulse Duration [sec] FMG2G50US60 Rev. A 160 1 10 ...

Page 7

... Common Cathode 125 C 120 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 100A 100 Forward Current, I [A] F FMG2G50US60 Rev. A ...

Page 8

... Package Dimension ©2001 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G50US60 Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

Related keywords