FMG2G100US60

Manufacturer Part NumberFMG2G100US60
DescriptionIGBT MOLDING 600V 100A 7PM-GA
ManufacturerFairchild Semiconductor
FMG2G100US60 datasheet
 

Specifications of FMG2G100US60

ConfigurationHalf BridgeVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic2.8V @ 15V, 100ACurrent - Collector (ic) (max)100A
Current - Collector Cutoff (max)250µAInput Capacitance (cies) @ Vce10.84nF @ 30V
Power - Max400WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / Case7PM-GALead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-  
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FMG2G100US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ T
= 100°C, V
C
• High Speed Switching
• Low Saturation Voltage : V
CE(sat)
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GES
I
Collector Current
C
I
Pulsed Collector Current
CM (1)
I
Diode Continuous Forward Current
F
I
Diode Maximum Forward Current
FM
T
Short Circuit Withstand Time
SC
P
Maximum Power Dissipation
D
T
Operating Junction Temperature
J
T
Storage Temperature Range
stg
V
Isolation Voltage
iso
Power Terminals Screw : M5
Mounting
Torque
Mounting Screw : M5
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
= 15V
GE
= 2.2 V @ I
= 100A
C
T
= 25°C unless otherwise noted
C
Description
@ T
= 25°C
C
@ T
= 100°C
C
@ T
= 100°C
C
@ T
= 25°C
C
@ AC 1minute
September 2001
IGBT
Package Code : 7PM-GA
E1/C2
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
FMG2G100US60
Units
600
V
± 20
V
100
A
200
A
100
A
200
A
10
us
400
W
°C
-40 to +150
°C
-40 to +125
2500
V
2.0
N.m
2.0
N.m
FMG2G100US60 Rev. A

FMG2G100US60 Summary of contents

  • Page 1

    ... C Description @ T = 25° 100° 100° 25° 1minute September 2001 IGBT Package Code : 7PM-GA E1/ Internal Circuit Diagram FMG2G100US60 Units 600 V ± 100 A 200 A 100 A 200 400 W °C -40 to +150 °C -40 to +125 2500 V 2.0 N.m 2.0 N.m FMG2G100US60 Rev. A ...

  • Page 2

    ... V = 15V -- G GE Inductive Load 125° 300 15V 100° 300 100A 15V GE -- Typ. Max. Units -- -- V 0.6 -- V/°C -- 250 uA ± 100 -- nA 6.0 8.5 V 2.2 2.8 V 10840 -- pF 963 -- pF 228 -- 110 200 240 -- 425 500 200 -- nC FMG2G100US60 Rev. A ...

  • Page 3

    ... 200 A/us Parameter (Conductive grease applied) Min. Typ. Max 25°C -- 1.9 2 100° 25° 130 100°C -- 130 -- 25° 100° 25°C -- 405 790 100°C -- 780 -- C Typ. Max. Units °C/W -- 0.31 °C/W -- 0.7 °C/W 0. 190 FMG2G100US60 Rev. A Units ...

  • Page 4

    ... Power Dissipation = 130W 0 100 150 0 Fig 4. Load Current vs. Frequency 20 Common Emitter 200A [V] GE Fig 6. Saturation Voltage vs 15V = 25 = 125 1 10 Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [Khz] = 125 200A 100A I = 50A Gate - Emitter Voltage FMG2G100US60 Rev ...

  • Page 5

    ... Fig 10. Switching Loss vs. Gate Resistance Common Emitter 100A 1000 Ton Tr 100 120 140 1 [A] C Fig 12. Turn-Off Characteristics vs. = +/- 15V Ton Tr 10 Ω Gate Resistance 300V +/- 15V Eon Eoff 10 Ω Gate Resistance 300V +/- 15V 125 C Toff Ω Gate Resistance Collector Current FMG2G100US60 Rev. A ...

  • Page 6

    ... CE Fig 18. Transient Thermal Impedance Ω 300 V 200 100 V CC 100 200 300 400 Gate Charge Safe Operating Area 20V 100 100 1000 Collector-Emitter Voltage IGBT : DIODE : - Rectangular Pulse Duration [sec] FMG2G100US60 Rev. A 500 1 10 ...

  • Page 7

    ... Common Cathode 250 125 C 200 150 100 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 200A 100 100 Forward Current, I [A] F FMG2G100US60 Rev. A ...

  • Page 8

    ... Package Dimension ©2001 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G100US60 Rev. A ...

  • Page 9

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...