FMG2G100US60 Fairchild Semiconductor, FMG2G100US60 Datasheet - Page 5

• Manufacturer Part Number: FMG2G100US60
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G100US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
3000
1000
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
30000
25000
20000
15000
10000
100
100
5000
10
50
0.5
0
20
6
Common Emitter
V
I
T
T
C
Common Emitter
V
R
T
T
C
C
CC
= 100A
CC
C
C
G
Gate Resistance
= 25
= 125
= 25
= 125
= 2.4
= 300V, V
Collector Current
= 300V, V
0
40
C
Ω
0
1
C
10
Cies
Coes
Cres
Collector - Emitter Voltage, V
GE
GE
= +/- 15V
=
Gate Resistance, R
60
Collector Current, I
15V
80
100
C
[A]
G
Common Emitter
V
T
[
Ω
C
GE
10
CE
]
= 25
120
= 0V, f = 1MHz
[V]
Ton
Tr
140
Toff
Tf
Tf
100
30
1000
10000
100
1000
10
1000
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
100
1
1
Common Emitter
V
I
T
T
1
C
C
C
CC
Common Emitter
V
I
T
T
= 100A
C
= 25
= 125
C
C
Common Emitter
V
I
T
T
CC
C
= 300V, V
= 100A
C
C
= 25
= 125
CC
= 100A
= 300V, V
= 25
= 125
= 300V, V
Collector Current
0
C
0
0
C
C
0
0
C
C
0
C
GE
GE
= +/- 15V
GE
Gate Resistance, R
= +/- 15V
= +/- 15V
Gate Resistance, R
Gate Resistance, R
10
10
10
G
G
[
[
g
Ω
Ω
[
Ω
]
]
]
Ton
Eoff
Tr
Eon
Toff
FMG2G100US60 Rev. A
Tf
Tf