FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet

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FMG2G150US60E

Manufacturer Part Number
FMG2G150US60E
Description
IGBT MOLDING 600V 150A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMG2G150US60E

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.84nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

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Price
Part Number:
FMG2G150US60E
Manufacturer:
FAIRCHILD
Quantity:
292
Part Number:
FMG2G150US60E
Quantity:
55
©2002 Fairchild Semiconductor Corporation
FMG2G150US60E
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
T
P
T
T
V
Mounting
Torque
C
CM (1)
F
FM
stg
SC
J
CES
GES
D
iso
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M6
CE(sat)
C
= 100°C, V
= 2.2 V @ I
Description
GE
T
= 15V
C
C
= 150A
= 25°C unless otherwise noted
@ T
@ T
@ T
@ T
@ AC 1minute
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
C1
Package Code : 7PM-GA
Internal Circuit Diagram
FMG2G150US60E
G1
-40 to +150
-40 to +125
E1
2500
± 20
600
150
300
150
300
500
2.0
2.5
10
E1/C2
G2
E2
IGBT
FMG2G150US60E Rev. A
E2
Units
N.m
N.m
us
°C
°C
W
V
V
A
A
A
A
V

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FMG2G150US60E Summary of contents

Page 1

... C Description @ T = 25° 100° 100° 25° 1minute IGBT Package Code : 7PM-GA E1/ Internal Circuit Diagram FMG2G150US60E Units 600 V ± 150 A 300 A 150 A 300 500 W °C -40 to +150 °C -40 to +125 2500 V 2.0 N.m 2.5 N.m FMG2G150US60E Rev. A ...

Page 2

... G GE Inductive Load 125° 300 15V 100° 300 150A 15V GE -- Typ. Max. Units -- -- V 0.6 -- V/°C -- 250 uA ± 100 -- nA 6.0 8.5 V 2.2 2.8 V 12840 -- pF 1400 -- pF 354 -- 110 200 100 -- ns 300 -- 620 700 nC 120 -- nC 270 -- nC FMG2G150US60E Rev. A ...

Page 3

... 300 A/us Parameter (Conductive grease applied) Min. Typ. Max 25°C -- 1.9 2 100° 25° 130 100°C -- 130 -- 25° 100° 25°C -- 675 1270 100°C -- 1430 -- C Typ. Max. Units °C/W -- 0.20 °C/W -- 0.47 °C/W 0. 270 FMG2G150US60E Rev. A Units ...

Page 4

... Duty cycle : 50 100 C Power Dissipation = 200W 0 120 150 0 Fig 4. Load Current vs. Frequency 20 Common Emitter T = 125 [V] GE Fig 6. Saturation Voltage vs 15V Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [Khz] 300A 150A I = 80A Gate - Emitter Voltage FMG2G150US60E Rev. A ...

Page 5

... Fig 12. Turn-Off Characteristics vs. = +/- 15V Ton Tr 10 Ω Gate Resistance Common Emitter V = 300V +/- 15V 150A 125 C C Eon Eoff 10 Ω Gate Resistance Common Emitter V = 300V +/- 15V CC GE Ω 2 125 C C Toff Tf Toff 100 120 140 Collector Current, I [A] C Collector Current FMG2G150US60E Rev. A ...

Page 6

... CE Fig 18. Transient Thermal Impedance Ω 300 V 200 100 V CC 100 200 300 400 500 600 Gate Charge Safe Operating Area 20V 100 100 1000 Collector-Emitter Voltage IGBT : DIODE : - Rectangular Pulse Duration [sec] FMG2G150US60E Rev. A 700 1 10 ...

Page 7

... Common Cathode 350 125 C 300 250 200 150 100 Forward Voltage, V Fig 19. Forward Characteristics ©2002 Fairchild Semiconductor Corporation 30 Common Cathode di/dt = 300A 100 [V] F Fig 20. Reverse Recovery Characteristics 100 120 140 160 Forward Current, I [A] F FMG2G150US60E Rev. A ...

Page 8

... Package Dimension ©2002 Fairchild Semiconductor Corporation 7PM-GA Dimensions in Millimeters FMG2G150US60E Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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