FMG2G150US60 Fairchild Semiconductor, FMG2G150US60 Datasheet

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FMG2G150US60

Manufacturer Part Number
FMG2G150US60
Description
IGBT MOLDING 600V 150A 7PM-HA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMG2G150US60

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Power - Max
595W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-HA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-

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©2003 Fairchild Semiconductor Corporation
FMG2G150US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
• Short Circuit Rated Time; 10us @ T
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
I
I
I
I
P
T
T
T
V
Mounting Torque
C
CM (1)
F
FM
SC
J
STG
CES
GES
D
ISO
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M6
CE
(sat) = 2.1 V @ I
C
=100°C, V
T
Description
C
C
GE
= 25°C unless otherwise noted
= 150A
= 15V
@ T
@ T
@ T
@ T
@ AC 1minute
C
C
C
C
= 80°C
= 80°C
= 25°C
= 100°C
C1
Package Code : 7PM-HA
Internal Circuit Diagram
G1
FMG2G150US60
E1
-40 to +150
-40 to +125
E1/C2
2500
± 20
600
150
300
150
300
595
4.0
4.0
10
G2
E2
IGBT
FMG2G150US60 Rev. A
E2
Units
N.m
N.m
°C
°C
us
W
V
V
A
A
A
A
V

Related parts for FMG2G150US60

FMG2G150US60 Summary of contents

Page 1

... C Description @ T = 80° 80° 25° 100° 1minute IGBT Package Code : 7PM-HA E1/ Internal Circuit Diagram FMG2G150US60 Units 600 V ± 150 A 300 A 150 A 300 A 595 °C -40 to +150 °C -40 to +125 2500 V 4.0 N.m 4.0 N.m FMG2G150US60 Rev. A ...

Page 2

... Min. Typ. Max. Units = 25°C -- 1.9 2.8 = 100° 25° 130 = 100°C -- 130 -- = 25° 100° 25°C -- 675 1270 = 100°C -- 1430 -- Typ. Max. Units -- 0.21 °C/W °C/W -- 0.48 °C/W 0.045 -- 240 -- g FMG2G150US60 Rev ...

Page 3

... Common Emitter Fig 2. Typical Saturation Voltage Characteristics Fig 4. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter 150A Ω G Fig 6. Turn-Off Characteristics vs. Gate Resistance 25℃ Common Emitter 15V ℃ 300V ± 15V GE = 25℃ ━━ = 125℃ ------ Ω g FMG2G150US60 Rev ...

Page 4

... Fig 12. Forward Characteristics(diode) Common Emitter V = ± 15V Ω ℃ ━━ 125 ℃ ------ Collector Current Common Emitter V = ± 15V Ω ℃ ━━ 125 ℃ ------ Common Cathode 25℃ 125℃ Forward Voltage, V [V] F FMG2G150US60 Rev ...

Page 5

... Common Cathode di/dt = 300A/㎲ 25℃ 100℃ Forward Current, I Fig 13. Reverse Recovery Characteristics(diode) ©2003 Fairchild Semiconductor Corporation 100 120 140 160 [A] F FMG2G150US60 Rev. A ...

Page 6

... Package Dimension 2- 6.5 Ø ±0.30 Mounting-Hole 3-M5 3-16.0 ±0.50 3-10.0 ±0.50 ©2003 Fairchild Semiconductor Corporation 7PM-HA 40.0 ±0.50 23.0 23.0 ±0.50 ±0. 80.0 ±0.50 94.0 ±0.50 +0.00 2.80 - *0.5t 0.50 1.3 Ø Name Plate 28.0 ±0.50 45.5 ±0.50 Dimensions in Millimeters FMG2G150US60 Rev. A ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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