APTGF50A120TG Microsemi Power Products Group, APTGF50A120TG Datasheet - Page 6

• Manufacturer Part Number: APTGF50A120TG
• Description: IGBT MODULE NPT PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50A120TG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.45nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.45
0.35
0.25
0.15
0.05
1000
0.4
0.3
0.2
0.1
100
0.00001
0
Capacitance vs Collector to Emitter Voltage
0
V
0.05
0.1
0.9
0.7
0.5
0.3
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cres
Cies
Single Pulse
50
0.01
120
100
80
60
40
20
120
100
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
10
V
switching
CE
APTGF50A120TG
Reverse Bias Safe Operating Area
0.1
Hard
, Collector to Emitter Voltage (V)
20
I
C
400
, Collector Current (A)
ZCS
ZVS
30
800
1
40
V
D = 50%
R
T
T
G
J
C
CE
= 125°C
= 75°C
= 5Ω
= 600V
50
1200
10
60
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