APTGF50DH60TG

Manufacturer Part NumberAPTGF50DH60TG
DescriptionIGBT MODULE NPT ASYM BRIDGE SP4
ManufacturerMicrosemi Power Products Group
APTGF50DH60TG datasheet
 

Specifications of APTGF50DH60TG

Igbt TypeNPTConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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All ratings @ T
Electrical Characteristics
Symbol Characteristic
I
Zero Gate Voltage Collector Current
CES
V
Collector Emitter Saturation Voltage
CE(sat)
V
Gate Threshold Voltage
GE(th)
I
Gate – Emitter Leakage Current
GES
Dynamic Characteristics
Symbol Characteristic
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
Q
Total gate Charge
g
Q
Gate – Emitter Charge
ge
Q
Gate – Collector Charge
gc
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
T
Turn-on Delay Time
d(on)
T
Rise Time
r
T
Turn-off Delay Time
d(off)
T
Fall Time
f
E
Turn-on Switching Energy
on
E
Turn-off Switching Energy
off
Diode ratings and characteristics
Symbol Characteristic
V
Maximum Peak Repetitive Reverse Voltage
RRM
I
Maximum Reverse Leakage Current
RM
I
DC Forward Current
F
V
Diode Forward Voltage
F
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
APTGF50DH60TG
= 25°C unless otherwise specified
j
Test Conditions
T
= 25°C
V
= 0V
j
GE
V
= 600V
T
= 125°C
CE
j
T
= 25°C
V
=15V
j
GE
I
= 50A
T
= 125°C
C
j
V
= V
, I
= 1mA
GE
CE
C
V
= 20V, V
= 0V
GE
CE
Test Conditions
V
= 0V
GE
V
= 25V
CE
f = 1MHz
V
= 15V
GE
V
= 300V
Bus
I
= 50A
C
Inductive Switching (25°C)
V
= 15V
GE
V
= 400V
Bus
I
= 50A
C
R
= 2.7Ω
G
Inductive Switching (125°C)
V
= 15V
GE
V
= 400V
Bus
I
= 50A
C
R
= 2.7Ω
G
V
= 15V
GE
T
= 125°C
j
V
= 400V
Bus
I
= 50A
C
T
= 125°C
j
R
= 2.7Ω
G
Test Conditions
Min
T
= 25°C
j
V
=600V
R
T
= 125°C
j
Tc = 70°C
I
= 60A
F
I
= 120A
F
I
= 60A
T
= 125°C
F
j
T
= 25°C
j
I
= 60A
F
T
= 125°C
j
V
= 400V
R
T
= 25°C
di/dt =200A/µs
j
T
= 125°C
j
www.microsemi.com
Min
Typ
Max
Unit
250
µA
500
1.7
2.0
2.45
V
2.2
4
6
V
400
nA
Min
Typ
Max
Unit
2200
pF
323
200
166
20
nC
100
40
9
ns
120
12
42
10
ns
130
21
0.5
mJ
1
Typ
Max
Unit
600
V
250
µA
500
60
A
1.6
1.8
1.9
V
1.4
130
ns
170
220
nC
920
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