APTGF50DH60TG Microsemi Power Products Group, APTGF50DH60TG Datasheet - Page 5

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APTGF50DH60TG

Manufacturer Part Number
APTGF50DH60TG
Description
IGBT MODULE NPT ASYM BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DH60TG

Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
60
50
40
30
20
60
50
40
30
20
10
1.5
0.5
0
2
1
0
Switching Energy Losses vs Gate Resistance
2.5
1.5
0.5
0
0
Turn-On Energy Loss vs Collector Current
3
2
1
0
0
Turn-On Delay Time vs Collector Current
0
Current Rise Time vs Collector Current
I
V
CE
V
R
R
V
V
T
I
CE
CE
G
CE
I
G
J
, Collector to Emitter Current (A)
CE
CE
GE
= 125°C
25
25
= 2.7Ω
, Collector to Emitter Current (A)
= 400V
= 2.7Ω
25
= 400V
, Collector to Emitter Current (A)
= 400V
= 15V
T
V
J
GE
=125°C
5
Gate Resistance (Ohms)
=15V,
Eon, 50A
50
50
50
10
75
75
75
T
V
J
15
=125°C,
GE
V
100
100
100
=15V
GE
Tj = 125°C
V
R
CE
G
= 15V
= 2.7Ω
= 400V
Eon, 50A
Eoff, 50A
125
125
20
125
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150
150
150
25
120
100
200
175
150
125
100
2.5
1.5
0.5
60
50
40
30
20
10
80
60
40
20
75
50
APTGF50DH60TG
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
Turn-Off Delay Time vs Collector Current
Current Fall Time vs Collector Current
I
CE
V
V
R
I
Reverse Bias Safe Operating Area
I
V
V
V
R
CE
CE
CE
G
CE
, Collector to Emitter Current (A)
CE
CE
G E
G
25
25
= 2.7Ω
25
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
, Collector to Emitter Voltage (V)
= 400V
= 2.7Ω
= 400V, V
= 400V
= 15V
T
J
= 125°C
200
50
50
50
GE
= 15V, R
75
75
75
T
J
T
= 25°C
J
= 125°C
V
G
T
GE
400
J
= 2.7Ω
100
100
100
=25°C
=15V,
V
T
J
GE
=125°C
=15V,
125
125
125
600
150
150
150
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