APTGF90A60TG

Manufacturer Part NumberAPTGF90A60TG
DescriptionIGBT MODULE NPT PHASE LEG SP4
ManufacturerMicrosemi Power Products Group
APTGF90A60TG datasheet
 

Specifications of APTGF90A60TG

Igbt TypeNPTConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 90A
Current - Collector (ic) (max)110ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce4.3nF @ 25VPower - Max416W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Phase leg
NPT IGBT Power Module
VBUS
Q1
G1
E1
Q2
G2
E2
0/VBU S
G2
E2
VBUS
0/VBUS
E1
E2
G1
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
NTC2
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
-
OUT
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
NTC1
-
-
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
OUT
Very rugged
Direct mounting to heatsink (isolated package)
OUT
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
Easy paralleling due to positive TC of VCEsat
NTC1
Low profile
RoHS compliant
Max ratings
600
T
= 25°C
110
c
T
= 80°C
90
c
T
= 25°C
315
c
±20
T
= 25°C
416
c
T
= 150°C
200A @ 600V
j
www.microsemi.com
APTGF90A60TG
V
= 600V
CES
I
= 90A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
Unit
V
A
V
W
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APTGF90A60TG Summary of contents

  • Page 1

    ... T = 25°C 315 c ± 25°C 416 150°C 200A @ 600V j www.microsemi.com APTGF90A60TG V = 600V CES I = 90A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency up to 100 kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90A60TG = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... R : Thermistor value   −       25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTGF90A60TG Min Typ Max Unit IGBT 0.3 °C/W 0.65 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m g 160 ...

  • Page 4

    ... On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 Ic=180A 2.5 2 1.5 Ic=45A Ic=90A 1 Ic=45A 0 -50 DC Collector Current vs Case Temperature 140 120 100 100 125 -50 www.microsemi.com APTGF90A60TG =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V = 90A CE = 25° =300V CE V =480V CE 50 100 ...

  • Page 5

    ... Eon, 180A CE Eoff, 180A V = 15V 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90A60TG Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

  • Page 6

    ... Coes 50 Cres Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 200 ZVS 160 120 80 40 Hard switching 0 20 www.microsemi.com APTGF90A60TG 200 400 600 800 , Collector to Emitter Voltage ( 400V 50 5Ω 125° 75°C ZCS 100 120 ...