APTGF90A60TG Microsemi Power Products Group, APTGF90A60TG Datasheet - Page 4

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APTGF90A60TG

Manufacturer Part Number
APTGF90A60TG
Description
IGBT MODULE NPT PHASE LEG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF90A60TG

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
350
300
250
200
150
100
50
50
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
J
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
T
2
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
T
, Junction Temperature (°C)
Transfer Characteristics
1
J
=125°C
3
0
T
10
J
4
=25°C
25
2
5
T
12
6
50
J
=-55°C
7
GE
75
T
T
=15V)
3
J
T
J
=-55°C
=125°C
T
14
Ic=180A
J
8
=25°C
J
Ic=45A
Ic=90A
=-55°C
100 125
9
10
16
4
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300
250
200
150
100
140
120
100
3.5
2.5
1.5
0.5
50
80
60
40
20
18
16
14
12
10
0
4
3
2
1
0
0
8
6
4
2
0
-50
-50
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
Ic=180A
250µs Pulse Test
< 0.5% Duty cycle
V
Ic=45A
I
T
C
Output Characteristics (V
CE
J
-25
= 90A
= 25°C
-25
, Collector to Emitter Voltage (V)
50
T
J
T
, Junction Temperature (°C)
APTGF90A60TG
C
, Case Temperature (°C)
1
0
100
0
Gate Charge (nC)
25
V
T
Gate Charge
25
150
CE
J
=25°C
=300V
50
2
250µs Pulse Test
< 0.5% Duty cycle
V
V
200
50
GE
CE
75
= 15V
=120V
GE
T
250
75
J
100 125 150
=10V)
=-55°C
T
3
Ic=90A
V
J
=125°C
CE
100
=480V
300
125
350
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