APTGF90H60TG Microsemi Power Products Group, APTGF90H60TG Datasheet

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APTGF90H60TG

Manufacturer Part Number
APTGF90H60TG
Description
IGBT MODULE NPT FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF90H60TG

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
E2
G1
E1
G2
V
V
I
NPT IGBT Power Module
P
I
CM
NTC1
CES
C
GE
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
G3
E3
VBUS
E1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Q2
Full - Bridge
0/VBU S
OUT1
0/VBUS
Parameter
G4
G2
E4
E2
OUT2
VBUS
Q4
Q3
OUT2
OUT1
NTC2
NTC1
NTC2
T
T
T
T
T
www.microsemi.com
G3
G4
E4
E3
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A @ 600V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
600
110
315
±20
416
-
-
-
-
-
-
-
-
-
-
90
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
APTGF90H60TG
V
I
C
CES
= 90A @ Tc = 80°C
Unit
= 600V
W
V
A
V
®
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APTGF90H60TG Summary of contents

Page 1

... T = 25°C 315 c ± 25°C 416 150°C 200A @ 600V j www.microsemi.com APTGF90H60TG V = 600V CES I = 90A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency up to 100 kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90H60TG = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

Page 3

... R : Thermistor value   −       25 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : www.microsemi.com APTGF90H60TG Min Typ Max Unit IGBT 0.3 °C/W 0.65 2500 V -40 150 °C -40 125 -40 100 M5 2.5 4.7 N.m g 160 ...

Page 4

... On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 Ic=180A 2.5 2 1.5 Ic=45A Ic=90A 1 Ic=45A 0 -50 DC Collector Current vs Case Temperature 140 120 100 100 125 -50 www.microsemi.com APTGF90H60TG =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V = 90A CE = 25° =300V CE V =480V CE 50 100 ...

Page 5

... Eon, 180A CE Eoff, 180A V = 15V 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90H60TG Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

Page 6

... Coes 50 Cres Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 200 ZVS 160 120 80 40 Hard switching 0 20 www.microsemi.com APTGF90H60TG 200 400 600 800 , Collector to Emitter Voltage ( 400V 50 5Ω 125° 75°C ZCS 100 120 ...

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