MII400-12E4 IXYS, MII400-12E4 Datasheet

IGBT 1.2KV 420A MODULE

MII400-12E4

Manufacturer Part Number
MII400-12E4
Description
IGBT 1.2KV 420A MODULE
Manufacturer
IXYS
Datasheet

Specifications of MII400-12E4

Configuration
Half Bridge
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 300A
Current - Collector (ic) (max)
420A
Current - Collector Cutoff (max)
3.3mA
Input Capacitance (cies) @ Vce
17nF @ 25V
Power - Max
1700W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y3-Li
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
420
Ic80, Tc = 80°c, Igbt, (a)
300
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
30
Rthjc, Max, Igbt, (k/w)
0.08
If25, Tc = 25°c, Diode, (a)
450
If80, Tc = 80°c, Diode, (a)
290
Rthjc, Max, Diode, (k/w)
0.15
Package Style
Y3-Li
Lead Free Status / RoHS Status
Compliant
Other names
Q3365676
IGBT Module
phaseleg and chopper topolgies
with optional temperature sensor
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
IGBTs T1 - T2
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
CES
GES
C25
C80
CM
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
CEK
tot
ies
thJC
thJH
Gon
Conditions
T
T
T
V
RBSOA Clamped inductive load; L = 100 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
(per IGBT)
with heatsink compound
C
C
VJ
C
C
GE
VJ
C
CE
CE
CE
GE
CE
CE
CE
= 300 A; V
= 10 mA; V
= 25°C
= 80°C
= 25°C
= 25°C to 125°C
= 125°C; non-repetitive
= V
= 600 V; V
= 900 V; V
= 0 V; V
= 600 V; I
= ± 15 V; R
= 25 V; V
= ± 15 V; R
NTC for ...T version only
CES
11
10
; V
8
9
GE
MII 400-12E4
GE
GE
GE
GE
C
GE
GE
= ± 20 V
G
G
T2
T1
= 0 V;
= 300 A
= 15 V;
= 0 V; f = 1 MHz
= V
= 4.7 Ω; T
= 4.7 Ω
= ± 15 V; R
VJ
= 15 V; I
= 125°C
CE
D2
D1
C
3
1
2
VJ
= 300 A
G
T
T
T
T
= 125°C
VJ
VJ
VJ
VJ
= 4.7 Ω
(T
= 25°C
= 125°C
= 25°C
= 125°C
11
10
MID 400-12E4(T)
VJ
6
7
= 25°C, unless otherwise specified)
T2
min.
D12
D1
4.5
Characteristic Values
3
1
2
Preliminary Data
Maximum Ratings
1.74
0.15
typ.
170
680
2.2
2.6
0.8
3.5
60
50
44
30
17
8
9
MDI 400-12E4
1200
1700
max.
T1
± 20
0.08
V
MII400-12E4
420
300
450
600
2.8
6.5
3.3
CES
10
D2
D11
K/W
K/W
mA
mA
mJ
mJ
µC
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
3
1
2
I
V
V
Features
• NPT
• HiPerFRED
• NTC sensor for measurement of case
• Package
Applications
• drives
• power supplies
C25
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
temperature
- low inductive current path
- screw connection to high current
- use of non interchangeable
- Kelvin emitter terminal for easy drive
- isolated ceramic base plate
- AC
- DC
- rectifiers with power factor correction
- UPS
CES
CE(sat) typ.
performance in resonant circuits
main terminals
connectors for auxiliary terminals
possible
and recuperation capability
3
IGBT
MID400-12E4(T)
MDI400-12E4
TM
= 420 A
= 1200 V
=
1
diodes
2.2 V
2
3
20090812c
11
10
1 - 2
9
8

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MII400-12E4 Summary of contents

Page 1

... MHz ies 600 Gon (per IGBT) thJC R with heatsink compound thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved MII400-12E4 Preliminary Data MID 400-12E4(T) MDI 400-12E4 D12 Maximum Ratings 1200 ± 20 420 300 = 125° ...

Page 2

... Mounting torque (module, M6) d (terminal, M6) Symbol Conditions d Creepage distance on surface S d Strike distance in air A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved MII400-12E4 Maximum Ratings 450 290 Characteristic Values min. typ. max 25°C 2.3 2 125° ...

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