MKI75-12E8 IXYS, MKI75-12E8 Datasheet
MKI75-12E8
Manufacturer Part Number
MKI75-12E8
Description
MOD IGBT H-BRIDGE 1200V 130A E3
Manufacturer
IXYS
Datasheet
1.MKI75-12E8.pdf
(4 pages)
Specifications of MKI75-12E8
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 75A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
1.1mA
Input Capacitance (cies) @ Vce
5.7nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
130
Ic80, Tc = 80°c, Igbt, (a)
90
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.0
Eoff, Typ, Tj = 125°c, Igbt, (mj)
7.5
Rthjc, Max, Igbt, (k/w)
0.25
If25, Tc = 25°c, Diode, (a)
150
If80, Tc = 80°c, Diode, (a)
100
Rthjc, Max, Diode, (k/w)
0.41
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
I
V
t
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
RBSOA; clamped inductive load; L = 100 µH
V
SCSOA; non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Inductive load, T
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
GE
CE
CE
= 3 mA; V
= 75 A; V
= 25°C
= 80°C
= 25°C
13, 21
14, 20
= 25°C to 150°C
= 900 V; V
= V
= 600 V; V
= ± 15 V; R
= 0 V; V
= 600 V; I
= ± 15 V; R
= 25 V; V
1
2
3
4
CES
;
GE
GE
GE
GE
C
= 15 V; T
GE
GE
= ± 20 V
G
= V
V
G
= 75 A
= 0 V; f = 1 MHz
GE
= 15 Ω; T
= 15 Ω
VJ
= ± 15 V; R
= 15 V; I
5
6
7
8
CE
= 0 V; T
= 125°C
MWI
T
VJ
VJ
C
= 25°C
= 125°C
VJ
= 100 A
T
10
11
12
G
= 125°C
9
VJ
VJ
= 15 Ω; T
(T
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
19
17
15
= 125°C
13, 21
14, 20
min.
4.5
Characteristic Values
1
2
3
4
Maximum Ratings
0.58
150
680
typ.
2.0
2.2
1.1
7.5
5.7
60
50
1200
± 20
V
9
130
150
500
MKI
CES
10
11
12
90
10
9
max.
0.25 K/W
400
2.5
6.5
1.1 mA
mA
mJ
mJ
µC
nA
nF
19
15
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
• NPT
• HiPerFRED
• Industry Standard Package
Typical Applications
• MWI
• MKI
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- solderable pins for PCB mounting
- isolated copper base plate
- AC drives
- power supplies with power factor
- motor control
- supply of transformer primary winding
CES
CE(sat) typ.
easy paralleling
performance also in resonant circuits
correction
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
. power supplies
. welding
. X-ray
. battery charger
3
IGBTs
TM
diode:
= 130 A
= 1200 V
= 2.0 V
MWI 75-12 E8
MKI 75-12 E8
20070912a
E72873
1 - 4
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MKI75-12E8 Summary of contents
Page 1
... Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 14, 20 MWI MKI Maximum Ratings 1200 ± 20 130 90 = 125°C 150 VJ V CES = 15 Ω 125° ...
Page 2
... S d Strike distance in air A R with heatsink compound thCH Weight pins and 17 for MWI only IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 150 100 Characteristic Values min. typ. = 25°C 2 125° ...
Page 3
... Fig. 3 Typ. transfer characteristics 600 100 100 200 300 400 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 250 200 150 100 250 200 I F 150 100 T = 25°C ...
Page 4
... 125° 200 400 600 800 1000 1200 1400 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 200 t d(on) ns 150 E t off 100 120 A 160 I C ...