MWI50-12E7 IXYS, MWI50-12E7 Datasheet
MWI50-12E7
Specifications of MWI50-12E7
Available stocks
Related parts for MWI50-12E7
MWI50-12E7 Summary of contents
Page 1
... A d(off Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved MWI MKI Maximum Ratings 1200 ± 125°C 100 VJ V CES = 22 Ω 125°C ...
Page 2
... ISOL M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2007 IXYS All rights reserved Maximum Ratings 110 70 Characteristic Values min. typ. = 25°C 2 125°C 1 125° 200 Maximum Ratings -40 ...
Page 3
... Q G Fig. 6 MWI 50-12 E7 MKI 50- 125° 125° 25° Typ. forward characteristics of free wheeling diode 125° 600 200 400 600 800 A/μs -di/dt Typ. turn off characteristics of free wheeling diode 300 ns 240 t rr 180 120 60 MWI5012E7 0 1000 20070912a ...
Page 4
... Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 A 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IGBT MWI5012E7 20070912a ...