MWI50-12E7 IXYS, MWI50-12E7 Datasheet

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MWI50-12E7

Manufacturer Part Number
MWI50-12E7
Description
MOD IGBT SIXPACK H-BRDG 1200V E2
Manufacturer
IXYS
Datasheet

Specifications of MWI50-12E7

Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
90A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
3.8nF @ 25V
Power - Max
350W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
90A
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
90
Ic80, Tc = 80°c, Igbt, (a)
62
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.9
Eoff, Typ, Tj = 125°c, Igbt, (mj)
4.0
Rthjc, Max, Igbt, (k/w)
0.35
If25, Tc = 25°c, Diode, (a)
110
If80, Tc = 80°c, Diode, (a)
70
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWI50-12E7
Manufacturer:
MICROCHIP
Quantity:
2 500
Part Number:
MWI50-12E7
Quantity:
60
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
I
V
t
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBTs
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
RBSOA; clamped inductive load; L = 100 µH
V
SCSOA; non-repetitive
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
GE
CE
CE
= 2 mA; V
= 50 A; V
= 25°C
= 80°C
= 25°C
= 25°C to 150°C
= 900 V; V
= V
= 600 V; V
= ± 15 V; R
= 0 V; V
= 600 V; I
= ± 15 V; R
= 25 V; V
13
17
1
2
3
4
CES
;
GE
GE
GE
GE
C
= 15 V; T
GE
GE
= ± 20 V
G
= V
V
G
= 50 A
= 0 V; f = 1 MHz
GE
= 22 Ω; T
= 22 Ω
VJ
= 15 V; I
= ± 15 V; R
5
6
7
8
CE
= 0 V; T
= 125°C
MWI
T
VJ
VJ
C
= 25°C
= 125°C
VJ
= 50 A
T
10
11
12
G
= 125°C
9
VJ
VJ
= 22 Ω; T
(T
= 25°C
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
16
15
14
= 125°C
min.
4.5
13
17
Characteristic Values
1
2
3
4
Maximum Ratings
680
350
typ.
1.9
2.1
0.8
6.0
4.0
3.8
80
50
30
1200
± 20
V
100
350
MKI
CES
10
11
12
90
62
10
9
max.
0.35 K/W
200
2.4
6.5
0.8 mA
mA
mJ
mJ
nC
nA
nF
16
14
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
• NPT
• HiPerFRED
• Industry Standard Package
Typical Applications
• MWI
• MKI
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered
- AC drives
- power supplies with power factor
- motor control
- supply of transformer primary winding
CES
CE(sat) typ.
easy paralleling
performance also in resonant circuits
correction
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
. power supplies
. welding
. X-ray
. battery charger
3
IGBTs
TM
diode:
= 90 A
= 1200 V
= 1.9 V
MWI 50-12 E7
MKI 50-12 E7
20070912a
E72873
1 - 4

Related parts for MWI50-12E7

MWI50-12E7 Summary of contents

Page 1

... A d(off Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved MWI MKI Maximum Ratings 1200 ± 125°C 100 VJ V CES = 22 Ω 125°C ...

Page 2

... ISOL M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2007 IXYS All rights reserved Maximum Ratings 110 70 Characteristic Values min. typ. = 25°C 2 125°C 1 125° 200 Maximum Ratings -40 ...

Page 3

... Q G Fig. 6 MWI 50-12 E7 MKI 50- 125° 125° 25° Typ. forward characteristics of free wheeling diode 125° 600 200 400 600 800 A/μs -di/dt Typ. turn off characteristics of free wheeling diode 300 ns 240 t rr 180 120 60 MWI5012E7 0 1000 20070912a ...

Page 4

... Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W 0.1 single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 A 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IGBT MWI5012E7 20070912a ...

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