MWI75-12E8 IXYS, MWI75-12E8 Datasheet
MWI75-12E8
Specifications of MWI75-12E8
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MWI75-12E8 Summary of contents
Page 1
... Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 14, 20 MWI MKI Maximum Ratings 1200 ± 20 130 90 = 125°C 150 VJ V CES = 15 Ω 125° ...
Page 2
... S d Strike distance in air A R with heatsink compound thCH Weight pins and 17 for MWI only IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 150 100 Characteristic Values min. typ. = 25°C 2 125° ...
Page 3
... Fig. 2 Typ. output characteristics 125° 25° Fig. 4 Typ. forward characteristics of free wheeling diode 125° 600 100 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 300 200 t rr 100 MWI75-12E8 0 800 1000 A/μs 20070912a ...
Page 4
... R G Fig.10 Typ. turn off energy and switching times versus gate resistor 1 0.1 single pulse 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 800 ns t 600 d(off) t 400 200 160 2000 t d(off) ns 1500 t 1000 500 Ω 80 diode IGBT MWI75-12E8 20070912a ...