VID160-12P1 IXYS, VID160-12P1 Datasheet
VID160-12P1
Specifications of VID160-12P1
Related parts for VID160-12P1
VID160-12P1 Summary of contents
Page 1
... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID L9 X15 L9 T16 NTC X16 F1 Maximum Ratings 1200 ± 20 169 117 = 125°C ...
Page 2
... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 154 97 Characteristic Values min. ...
Page 3
... Fig. 3 Typ. transfer characteristics 600V 100A 100 200 300 400 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 250 V =17V GE 200 15V I 13V C 150 11V 100 9V 156T120 2,5 3 300 ...
Page 4
... G 120 T = 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 40 120 off 600V ±15V ...